SMUN5215T1G

更新时间： 2024-09-16 12:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号双极晶体管数字晶体管
页数	文件大小	规格书
12页	140K
描述
Digital Transistors (BRT) R1 = 10 k, R2 = k

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中文翻译

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技术参数
数据手册

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SMUN5215T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	4 weeks
风险等级：	5.69	Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	160
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.31 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	Tin (Sn)
晶体管元件材料：	SILICON	Base Number Matches：	1

SMUN5215T1G 数据手册

MUN2215, MMUN2215L,

MUN5215, DTC114TE,

DTC114TM3, NSBC114TF3

Digital Transistors (BRT)

R1 = 10 kW, R2 = 8 kW

http://onsemi.com

PIN CONNECTIONS

NPN Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

SC−59

CASE 318D

STYLE 1

XX MG

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

SOT−23

CASE 318

STYLE 6

XXX MG

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C)

SC−70/SOT−323

CASE 419

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

XX MG

CBO

CEO

STYLE 3

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

August, 2012 − Rev. 0

DTC114T/D

12 3 4 5 6 7...12

中文翻译

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与SMUN5215T1G相关器件

型号	品牌	获取价格	描述	数据表
SMUN5216DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5230DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5230DW1T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
SMUN5231DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5231DW1T1G	ONSEMI	获取价格	双 NPN 偏置电阻晶体管 (BRT)
SMUN5232DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5232DW1T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
SMUN5232T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
SMUN5233DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5233DW1T1G	ONSEMI	获取价格	双路 PNP 双极数字晶体管 (BRT)

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