Datasheet > SMUN5313DW1T1G

SMUN5313DW1T1G

更新时间： 2024-11-22 00:58:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
34页	270K
描述
Dual Bias Resistor Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMUN5313DW1T1G 数据手册

MUN5311DW1T1G,

SMUN5311DW1T1G,

NSVMUN5311DW1T1GꢀSeries

Dual Bias Resistor

Transistors

http://onsemi.com

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

SOT−363

CASE 419B

STYLE 1

The Bias Resistor Transistor (BRT) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

(3)

(2)

(1)

integrating them into

single device. In the

MUN5311DW1T1G series, two complementary BRT devices are

housed in the SOT−363 package which is ideal for low power surface

mount applications where board space is at a premium.

(4)

(5)

(6)

Features

• Simplifies Circuit Design

• Reduces Board Space

MARKING DIAGRAM

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

xx M G

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

= Device Code

= Date Code*

= Pb−Free Package

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

(Note: Microdot may be in either location)

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for

*Date Code orientation and/or position may

vary depending upon manufacturing location.

Q and Q , − minus sign for Q (PNP) omitted)

Rating

Symbol

Value

Unit

Vdc

ORDERING AND DEVICE MARKING

INFORMATION

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

Vdc

See detailed ordering, shipping, and specific marking

information in the table on page 2 of this data sheet.

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

March, 2014 − Rev. 14

MUN5311DW1T1/D

12 3 4 5 6 7...34

中文翻译

下载PDF

与SMUN5313DW1T1G相关器件

型号	品牌	获取价格	描述	数据表
SMUN5313DW1T3G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
SMUN5314DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5314DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
SMUN5315DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5315DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
SMUN5316DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5330DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5330DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
SMUN5331DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5332DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor

与SMUN5313DW1T1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN5313DW1T1G

SMUN5313DW1T1G 数据手册

与SMUN5313DW1T1G相关器件

与SMUN5313DW1T1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN5313DW1T1G

SMUN5313DW1T1G 数据手册

与SMUN5313DW1T1G相关器件

与SMUN5313DW1T1G相关文章

您还可以找

您在本页遇到什么问题？