Datasheet > SMUN5330DW

SMUN5330DW

更新时间： 2024-11-25 09:18:31

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
28页	330K
描述
NPN / PNP Digital Small Signal Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMUN5330DW 数据手册

SMUN5311DW Series

NPN / PNP

Digital Small Signal Transistors

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” indicates halogen-free.

DESCRIPTION

SOT-363

The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic

bias network consisting of two resistors; a series base resistor and a base−emitter

resistor. These digital transistors are designed to replace a single device and its

external resistor bias network. The BRT eliminates these individual components by

integrating them into a single device. In the SMUN5311DW series, two

complementary BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a premium.

FEATURE

ꢀ Simplifies circuit design

ꢀ Reduces board space

ꢀ Reduces component count

D G

ꢀ Available in 8 mm, 7 inch/3000 unit tape and reel

ꢀ The devices are Pb-Free

Millimeter

Min. Max.

0.100 REF.

0.525 REF.

0.08 0.15

REF.

Min.

Max.

2.20

2.45

1.35

1.10

2.00

2.15

1.15

0.90

R₁

R₂

Q₂

8°

1.20

0.15

1.40

0.35

0.650 TYP.

R₂

R₁

Q₁

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS

(T_A= 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)

PARAMETER

Collector - Base Voltage

SYMBOL

VALUE

UNIT

Vdc

V_CBO

V_CEO

I_C

Collector - Emitter Voltage

Vdc

Collector Currrent – Continuous

100

mAdc

ONE JUNCTION HEATED THERMAL CHARACTERISTICS

187(1)

Total Device Dissipation, T_A=25°C

mW/°C

°C/W

256(2)

P_D

1.5(1)

Total Device Dissipation, Derate above 25°C

Thermal Resistance, Junction to Ambient

2.0(2)

670(1)

490(2)

R_θJA

BOTH JUNCTION HEATED THERMAL CHARACTERISTICS

250(1)

Total Device Dissipation, T_A=25°C

mW/°C

°C/W

385(2)

P_D

2.0(1)

Total Device Dissipation, Derate above 25°C

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead

3.0(2)

493(1)

325(2)

188(1)

208(2)

-55~150

R_θJA

R_θJL

°C/W

°C

Junction Temperature & Storage Temperature

T_J,T_STG

Note:

1. FR-4 @ minimum pad

2. FR-4 @ 1.0 x 1.0 inch pad

18-Dec-2009 Rev. A

Page 1 of 28

12 3 4 5 6 7...28

中文翻译

下载PDF

与SMUN5330DW相关器件

型号	品牌	获取价格	描述	数据表
SMUN5330DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
SMUN5331DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5332DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5333DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5334DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5335DW	SECOS	获取价格	NPN / PNP Digital Small Signal Transistor
SMUN5335DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
SMUN5335DW1T2G	ONSEMI	获取价格	Dual Bias Resistor Transistors
SMUR1060	GOOD-ARK	获取价格	快恢复整流管
SMUR1060F	GOOD-ARK	获取价格	Ultrafast Recovery Planar Diode