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SMUN5335DW1T2G PDF预览

SMUN5335DW1T2G

更新时间： 2024-11-22 00:58:27
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
34页 270K
描述
Dual Bias Resistor Transistors

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中文翻译

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SMUN5335DW1T2G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：5.71
其他特性：BUILT-IN BIAS RESISTOR RATIO 21.36最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN AND PNP最大功率耗散 (Abs)：0.256 W
参考标准：AEC-Q101子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SMUN5335DW1T2G 数据手册

 浏览型号SMUN5335DW1T2G的Datasheet PDF文件第2页浏览型号SMUN5335DW1T2G的Datasheet PDF文件第3页浏览型号SMUN5335DW1T2G的Datasheet PDF文件第4页浏览型号SMUN5335DW1T2G的Datasheet PDF文件第5页浏览型号SMUN5335DW1T2G的Datasheet PDF文件第6页浏览型号SMUN5335DW1T2G的Datasheet PDF文件第7页 
MUN5311DW1T1G,  
SMUN5311DW1T1G,  
NSVMUN5311DW1T1GꢀSeries  
Dual Bias Resistor  
Transistors  
http://onsemi.com  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
SOT−363  
CASE 419B  
STYLE 1  
The Bias Resistor Transistor (BRT) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
(3)  
(2)  
(1)  
R
1
R
2
integrating them into  
a
single device. In the  
Q
1
MUN5311DW1T1G series, two complementary BRT devices are  
housed in the SOT−363 package which is ideal for low power surface  
mount applications where board space is at a premium.  
Q
2
R
2
R
1
(4)  
(5)  
(6)  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
MARKING DIAGRAM  
6
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
xx M G  
G
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
1
xx  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
(Note: Microdot may be in either location)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for  
A
*Date Code orientation and/or position may  
vary depending upon manufacturing location.  
Q and Q , − minus sign for Q (PNP) omitted)  
1
2
1
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
ORDERING AND DEVICE MARKING  
INFORMATION  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
CBO  
CEO  
V
50  
Vdc  
See detailed ordering, shipping, and specific marking  
information in the table on page 2 of this data sheet.  
I
C
100  
mAdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
March, 2014 − Rev. 14  
MUN5311DW1T1/D  
1234567...34

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