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SMUN5235DW1T3G PDF预览

SMUN5235DW1T3G

更新时间： 2024-09-17 01:18:51
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
8页 124K
描述
Dual NPN Bias Resistor Transistors

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中文翻译

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SMUN5235DW1T3G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：8 weeks
风险等级：5.22其他特性：BUILT IN BIAS RESISTANCE RATIO IS 21.36
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
参考标准：AEC-Q101表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

SMUN5235DW1T3G 数据手册

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MUN5235DW1,  
NSBC123JDXV6,  
NSBC123JDP6  
Dual NPN Bias Resistor  
Transistors  
R1 = 2.2 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
NPN Transistors with Monolithic Bias  
Resistor Network  
(3)  
(1)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
MARKING DIAGRAMS  
6
SOT−363  
CASE 419B  
7M M G  
G
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
1
Compliant  
MAXIMUM RATINGS  
(T = 25°C, common for Q and Q , unless otherwise noted)  
SOT−563  
CASE 463A  
1
7M M G  
A
1
2
G
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
CEO  
V
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
12  
mAdc  
Vdc  
SOT−963  
CASE 527AD  
M G  
C
G
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
5
Vdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
7M/D  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
*Date Code orientation may vary depending  
upon manufacturing location.  
†
Device  
Package  
Shipping  
MUN5235DW1T1G,  
SMUN5235DW1T1G  
SOT−363  
3,000 / Tape & Reel  
SMUN5235DW1T3G  
NSBC123JDXV6T1G  
NSBC123JDXV6T5G  
NSBC123JDP6T5G  
SOT−363  
SOT−563  
SOT−563  
SOT−963  
10,000 / Tape & Reel  
4,000 / Tape & Reel  
8,000 / Tape & Reel  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
February, 2014 − Rev. 1  
DTC123JD/D  
12345678

中文翻译

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SMUN5235DW1T3G 替代型号

型号 品牌 替代类型 描述 数据表
MUN5235DW1T1 ONSEMI

类似代替

 Dual Bias Resistor Transistors
SMUN5235DW1T1G ONSEMI

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MUN5235DW1T1G ONSEMI

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