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SMUN5131DW1T1G PDF预览

SMUN5131DW1T1G

更新时间： 2024-09-16 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 110K
描述
Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k

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中文翻译

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SMUN5131DW1T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：4 weeks风险等级：5.74
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：8JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
最大功率耗散 (Abs)：0.385 W参考标准：AEC-Q101
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SMUN5131DW1T1G 数据手册

 浏览型号SMUN5131DW1T1G的Datasheet PDF文件第2页浏览型号SMUN5131DW1T1G的Datasheet PDF文件第3页浏览型号SMUN5131DW1T1G的Datasheet PDF文件第4页浏览型号SMUN5131DW1T1G的Datasheet PDF文件第5页浏览型号SMUN5131DW1T1G的Datasheet PDF文件第6页 
MUN5131DW1,  
NSBA123EDXV6  
Dual PNP Bias Resistor  
Transistors  
R1 = 2.2 kW, R2 = 2.2 kW  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
PNP Transistors with Monolithic Bias  
Resistor Network  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
MARKING DIAGRAMS  
• Reduces Component Count  
6
SOT−363  
CASE 419B  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
0H M G  
G
Compliant  
1
1
MAXIMUM RATINGS  
(T = 25°C, common for Q1 and Q2, unless otherwise noted)  
A
SOT−563  
CASE 463A  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
0H M G  
V
CBO  
G
V
CEO  
50  
Vdc  
I
C
100  
12  
mAdc  
Vdc  
0H  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5131DW1T1G,  
SMUN5131DW1T1G  
SOT−363  
3,000 / Tape & Reel  
NSBA123EDXV6T1G  
SOT−563  
4,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTA123ED/D  
123456

中文翻译

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 		NPN Multi-Chip Built-in Resistors Transistor
SMUN5213DW1T1G ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
SMUN5213T1G ONSEMI

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 		Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

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