SMUN5116DW1T1G

更新时间： 2024-11-21 12:27:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	141K
描述
Dual PNP Bias Resistor Transistors R1 = 4.7 kOhm, R2 = kOhm

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMUN5116DW1T1G 数据手册

MUN5116DW1,

NSBA143TDXV6

Dual PNP Bias Resistor

Transistors

R1 = 4.7 kW, R2 = 8 kW

http://onsemi.com

PIN CONNECTIONS

(2)

PNP Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(3)

(1)

Features

 Simplifies Circuit Design

 Reduces Board Space

(4)

(5)

(6)

 Reduces Component Count

MARKING DIAGRAMS

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

SOT−363

CASE 419B

0F M G

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

(T = 25C, common for Q and Q , unless otherwise noted)

SOT−563

CASE 463A

0F M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

Specific Device Code

Date Code*

Pb-Free Package

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5116DW1T1G,

SMUN5116DW1T1G

SOT−363

3,000/Tape & Reel

NSBA143TDXV6T1G

NSBA143TDXV6T5G

SOT−563

4,000/Tape & Reel

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTA143TD/D

12 3 4 5 6

中文翻译

下载PDF

与SMUN5116DW1T1G相关器件

型号	品牌	获取价格	描述	数据表
SMUN5131DW1T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
SMUN5133T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k
SMUN5211DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5211DW1T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
SMUN5211T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5211T3G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5212DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5212T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
SMUN5213DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5213DW1T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K

与SMUN5116DW1T1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN5116DW1T1G

SMUN5116DW1T1G 数据手册

与SMUN5116DW1T1G相关器件

与SMUN5116DW1T1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN5116DW1T1G

SMUN5116DW1T1G 数据手册

与SMUN5116DW1T1G相关器件

与SMUN5116DW1T1G相关文章

您还可以找

您在本页遇到什么问题？