是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 1.58 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 227131 |
Samacsys Pin Count: | 6 | Samacsys Part Category: | Integrated Circuit |
Samacsys Package Category: | SOT23 (6-Pin) | Samacsys Footprint Name: | SC-88 SC70-6 SOT-363 CASE 719B-02 ISSUE W |
Samacsys Released Date: | 2015-09-14 02:41:33 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 160 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.385 W |
参考标准: | AEC-Q101 | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMUN5115T1G | ONSEMI |
获取价格 |
Digital Transistors (BRT) R1 = 10 k, R2 = k | |
SMUN5116DW1T1G | ONSEMI |
获取价格 |
Dual PNP Bias Resistor Transistors R1 = 4.7 kOhm, R2 = kOhm | |
SMUN5131DW1T1G | ONSEMI |
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Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k | |
SMUN5133T1G | ONSEMI |
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Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k | |
SMUN5211DW | SECOS |
获取价格 |
NPN Multi-Chip Built-in Resistors Transistor | |
SMUN5211DW1T1G | ONSEMI |
获取价格 |
Dual NPN Bias Resistor Transistors | |
SMUN5211T1G | ONSEMI |
获取价格 |
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k | |
SMUN5211T3G | ONSEMI |
获取价格 |
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k | |
SMUN5212DW | SECOS |
获取价格 |
NPN Multi-Chip Built-in Resistors Transistor | |
SMUN5212T1G | ONSEMI |
获取价格 |
Digital Transistors (BRT) R1 = 22 k, R2 = 22 k |