Datasheet > SMG2305A

SMG2305A

更新时间： 2024-02-14 12:44:15

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	346K
描述
P-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SMG2305A 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.67
配置：	Single	最大漏极电流 (Abs) (ID)：	4.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.3 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

SMG2305A 数据手册

SMG2305A

-3.2A, -30V,RDS(ON) 80m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Description

The SMG2305A provide the designer with the best

combination of fast switching, low on-resistance

and cost-effectiveness.

The SMG2305A is universally preferred for all commercial

industrial surface mount application and suited for low

voltage applications such as DC/DC converters.

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Features

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

* Simple drive requirement

* Small package outline

Drain

Gate

Top View

Source

Applications

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 2305A

All Dimension in mm

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-30

±12

-3.2

-2.6

-10

Gate-Source Voltage

VGS

Continuous Drain Current³

Pulsed Drain Current

^oC

ID@TA=25

ID@TA=70

IDM

Total Power Dissipation

PD@TA=25^o

1.38

0.01

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient ³

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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