Datasheet > SMG2304A

SMG2304A

更新时间： 2024-02-27 16:49:12

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	455K
描述
N-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SMG2304A 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

SMG2304A 数据手册

SMG2304A

2.5A, 30V,RDS(ON) 117m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Description

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Top View

The SMG2304A utilized advanced processing

techniques to achieve the lowest possible on-

resistance, extremely efficient and cost-

effectiveness device. The SMG2304A is

universally used for all commercial-industrial

applications.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Features

Drain

Gate

* Small Package Outline

* Simple Drive Requirment

Source

All Dimension in mm

Marking : 2304A

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±20

2.5

2.0

Gate-Source Voltage

VGS

ID@TA=25^oC

Continuous Drain Current, VGS@10V

^oC

Continuous Drain Current, VGS@10V

I^D@TA=70

Pulsed Drain Current

I^DM

Total Power Dissipation

PD@TA=25^o

1.38

0.01

W/ ^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient ³

C /W

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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