5秒后页面跳转
SiJ4406DP PDF预览

SiJ4406DP

更新时间: 2024-11-22 14:47:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 185K
描述
N-Channel 40 V (D-S) MOSFET

SiJ4406DP 数据手册

 浏览型号SiJ4406DP的Datasheet PDF文件第2页浏览型号SiJ4406DP的Datasheet PDF文件第3页浏览型号SiJ4406DP的Datasheet PDF文件第4页浏览型号SiJ4406DP的Datasheet PDF文件第5页浏览型号SiJ4406DP的Datasheet PDF文件第6页浏览型号SiJ4406DP的Datasheet PDF文件第7页 
SiJ4406DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 40 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
PowerPAK® SO-8L Single  
• Very low Qg and Qoss reduce power  
loss and improve efficiency  
D
• Flexible leads provide resilience to  
mechanical stress  
1
S
2
S
• 100 % Rg and UIS tested  
3
S
• Qgd/Qgs ratio < 1 optimizes switching characteristics  
4
1
G
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Top View  
Bottom View  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) max. () at VGS = 10 V  
D
APPLICATIONS  
40  
0.00475  
0.0067  
10.9  
• Synchronous rectification  
• High power density DC/DC  
RDS(on) max. () at VGS = 4.5 V  
G
• DC/AC inverters  
Qg typ. (nC)  
ID (A) a  
Configuration  
78  
Single  
N-Channel MOSFET  
S
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK SO-8L  
SiJ4406DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
40  
+20, -16  
78  
UNIT  
VDS  
VGS  
V
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
62.4  
Continuous drain current (TJ = 150 °C)  
ID  
21.3 b, c  
17 b, c  
200  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
T
C = 25 °C  
47.3  
3.5 b, c  
Continuous source-drain diode current  
TA = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
20  
L = 0.1 mH  
EAS  
20  
41.6  
26.6  
mJ  
W
T
T
C = 25 °C  
C = 70 °C  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
3.9 b, c  
2.5 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction to ambient b, f  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
23  
2.4  
32  
30  
°C/W  
Maximum junction to case (drain)  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 70 °C/W  
S23-0486-Rev. B, 26-Jun-2023  
Document Number: 62257  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiJ4406DP相关器件

型号 品牌 获取价格 描述 数据表
SIJ4409DP VISHAY

获取价格

P-Channel 60 V (D-S) MOSFET
SiJ450DP VISHAY

获取价格

N-Channel 45 V (D-S) MOSFET
SIJ458DP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIJ458DP-T1-GE3 VISHAY

获取价格

N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
SiJ462ADP VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SiJ462DP VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SiJ470DP VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET
SiJ478DP VISHAY

获取价格

N-Channel 80 V (D-S) MOSFET
SiJ4819DP VISHAY

获取价格

P-Channel 80 V (D-S) MOSFET
SIJ482DP VISHAY

获取价格

N-Channel 80 V (D-S) MOSFET