Datasheet > SiJA52ADP

SiJA52ADP

更新时间： 2023-12-06 20:10:13

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	231K
描述
N-Channel 40 V (D-S) MOSFET

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SiJA52ADP 数据手册

SiJA52ADP

Vishay Siliconix

www.vishay.com

N-Channel 40 V (D-S) MOSFET

FEATURES

PowerPAK^®SO-8L Single

• TrenchFET^®Gen IV power MOSFET

• Tuned for the lowest R_DS-Q_ossFOM

• 100 % R_gand UIS tested

• Q_gd/Q_gsratio < 1 optimizes switching

characteristics

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Synchronous rectification

• High power density DC/DC

• DC/AC inverters

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

_D(A) ^a

0.00163

0.00230

• Battery and load switch

131

Configuration

Single

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and halogen-free

SiJA52ADP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

+20, -16

131

105

41.6 ^{b, c}

33.3 ^{b, c}

200

T_C= 25 °C

_C= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

43.6

4.3 ^{b, c}

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

30.7

4.8 ^{b, c}

3 ^{b, c}

T_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

1.7

2.6

°C/W

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless component

f. Maximum under steady state conditions is 70 °C/W

S18-0653-Rev. A, 02-Jul-2018

Document Number: 76636

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiJA52ADP相关器件

型号	品牌	获取价格	描述	数据表
SIJA52DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 60A PPAK SO-8L
SiJA54ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA54DP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIJA54DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 60A PPAK SO-8L
SiJA58ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA72ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA74DP	VISHAY	获取价格	N-Channel 40 V (D-S) 150 °C MOSFET
SiJH112E	VISHAY	获取价格	N-Channel 100 V (D-S) 175 °C MOSFET
SiJH400E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET
SiJH402E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET

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