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SiJH800E PDF预览

SiJH800E

更新时间: 2023-12-06 20:03:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 231K
描述
N-Channel 80 V (D-S) 175 °C MOSFET

SiJH800E 数据手册

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SiJH800E  
Vishay Siliconix  
www.vishay.com  
N-Channel 80 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
PowerPAK® 8 x 8L  
• Fully lead (Pb)-free device  
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces  
switching related power loss  
D
• 50 % smaller footprint than D2PAK (TO-263)  
G
1
S
2
S
• 100 % Rg and UIS tested  
S
3
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
4
S
G
1
D
APPLICATIONS  
Top View  
Bottom View  
• Synchronous rectification  
• OR-ing  
PRODUCT SUMMARY  
VDS (V)  
80  
G
RDS(on) max. (Ω) at VGS = 10 V  
0.00155  
0.00180  
140  
• Motor drive control  
RDS(on) max. (Ω) at VGS = 7.5 V  
• Battery management  
Qg typ. (nC)  
N-Channel MOSFET  
• Power supply  
S
a
ID (A)  
288  
Configuration  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK 8 x 8L  
SIJH800E-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
80  
20  
V
VGS  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
299  
241  
29 b  
24 b  
350  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
303  
3 b  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
70  
245  
333  
233  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA =70 °C  
Maximum power dissipation  
PD  
3.3 b  
2.3 b  
-55 to +175  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
Maximum junction-to-case (drain)  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
36  
0.36  
MAXIMUM  
45  
UNIT  
Steady state  
Steady state  
°C/W  
0.45  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
S21-0540-Rev. B, 31-May-2021  
Document Number: 63064  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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