Datasheet > SIJA52DP-T1-GE3

SIJA52DP-T1-GE3

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	231K
描述
MOSFET N-CH 40V 60A PPAK SO-8L

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIJA52DP-T1-GE3 数据手册

SiJA52DP

Vishay Siliconix

www.vishay.com

N-Channel 40 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®Gen IV power MOSFET

• Tuned for the lowest R_DS-Q_ossFOM

• 100 % R_gand UIS tested

V_DS(V)

R_DS(on)() Max.

0.0017 at V_GS= 10 V

0.0023 at V_GS= 4.5 V

I_D(A) ^{a, g}Q_g(Typ.)

47.5 nC

• Q_gd/ Q_gsratio < 1 optimizes switching

characteristics

PowerPAK^®SO-8L Single

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• ORing

• High power density DC/DC

• VRMs and embedded DC/DC

• DC/AC inverters

Top View

Bottom View

N-Channel MOSFET

Ordering Information: 

SiJA52DP-T1-GE3 (lead (Pb)-free and halogen-free)

• Load switch

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

+20, -16

60 ^g

39.6 ^{b, c}

31.3 ^{b, c}

150

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

56.8

4.3 ^{b, c}

Continuous Source-Drain Diode Current

T_A= 25 °C

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_AS

L = 0.1 mH

E_AS

_C= 25 °C

_C= 70 °C

30.7

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

4.8 ^{b, c}

3 ^{b, c}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient ^{b, f}

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R_thJC

1.7

2.6

Notes

a. T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

g. Package limited.

S16-0749-Rev. A, 25-Apr-16

Document Number: 67387

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SIJA52DP-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SiJA54ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA54DP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIJA54DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 60A PPAK SO-8L
SiJA58ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA72ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA74DP	VISHAY	获取价格	N-Channel 40 V (D-S) 150 °C MOSFET
SiJH112E	VISHAY	获取价格	N-Channel 100 V (D-S) 175 °C MOSFET
SiJH400E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET
SiJH402E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET
SiJH440E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET

与SIJA52DP-T1-GE3相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

9

产品中心

服务支持

精选活动

关于我们

帮助中心

SIJA52DP-T1-GE3

SIJA52DP-T1-GE3 数据手册

与SIJA52DP-T1-GE3相关器件

与SIJA52DP-T1-GE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIJA52DP-T1-GE3

SIJA52DP-T1-GE3 数据手册

与SIJA52DP-T1-GE3相关器件

与SIJA52DP-T1-GE3相关文章

您还可以找

您在本页遇到什么问题？