Datasheet > SiJA54ADP

SiJA54ADP

更新时间： 2024-11-26 14:54:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	179K
描述
N-Channel 40 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiJA54ADP 数据手册

SiJA54ADP

Vishay Siliconix

www.vishay.com

N-Channel 40 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®SO-8L Single

• Very low Q_gand Q_ossreduce power

loss and improve efficiency

• Flexible leads provide resilience to

mechanical stress

• 100 % R_gand UIS tested

• Q_gd/Q_gsratio < 1 optimizes switching characteristics

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. (Ω) at V_GS= 10 V

APPLICATIONS

0.0023

0.00335

21.5

• Synchronous rectification

• High power density DC/DC

R_DS(on)max. (Ω) at V_GS= 4.5 V

• DC/AC inverters

Q_gtyp. (nC)

I_D(A) ^a

Configuration

126

Single

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and halogen-free

SIJA54ADP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

+20, -16

126

UNIT

V_DS

V_GS

T_C= 25 °C

_C= 70 °C

100

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

35.4 ^{b, c}

28.3 ^{b, c}

300

Pulsed drain current (t = 100 μs)

I_DM

I_S

_C= 25 °C

59.7

4.7 ^{b, c}

Continuous source-drain diode current

T_A= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

L = 0.1 mH

E_AS

31.25

65.7

42.1

_C= 25 °C

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

5.2 ^{b, c}

3.3 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction to ambient ^{b, f}

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady state

1.5

1.9

°C/W

Maximum junction to case (drain)

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 62.5 °C/W

S22-0214-Rev. A, 28-Feb-2022

Document Number: 62065

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与SiJA54ADP相关器件

型号	品牌	获取价格	描述	数据表
SiJA54DP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIJA54DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 60A PPAK SO-8L
SiJA58ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA72ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA74DP	VISHAY	获取价格	N-Channel 40 V (D-S) 150 °C MOSFET
SiJH112E	VISHAY	获取价格	N-Channel 100 V (D-S) 175 °C MOSFET
SiJH400E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET
SiJH402E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET
SiJH440E	VISHAY	获取价格	N-Channel 40 V (D-S) 175 °C MOSFET
SiJH5700E	VISHAY	获取价格	N-Channel 150 V (D-S) 175 °C MOSFET

与SiJA54ADP相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

SiJA54ADP

SiJA54ADP 数据手册

与SiJA54ADP相关器件

与SiJA54ADP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiJA54ADP

SiJA54ADP 数据手册

与SiJA54ADP相关器件

与SiJA54ADP相关文章

您还可以找

您在本页遇到什么问题？