SIL03N10A
Features
•
•
•
•
•
•
High Density Cell Design for Low RDS(on)
Trench Power HV MOSFET Technology
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
N-CHANNEL
Halogen Free.“Green” Device (Note 1)
MOSFET
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
•
•
Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
SOT23-6L
•
•
Thermal Resistance: 83°C/W Junction to Ambient(Note 1)
Thermal Resistance: 36°C/W Junction to Lead
G
5
Parameter
Rating
100
±20
3
Symbol
VDS
Unit
V
6
1
4
Drain-Source Voltage
Gate-Source Volltage
C
B
VGS
V
2
3
TA=25°C
TA=70°C
A
A
H
ID
Continuous Drain Current
Pulsed Drain Current(Note 2)
2.4
A
IDM
PD
12
A
M
K
Total Power Dissipation
1.5
W
J
D
L
Note :
1.Halogen free "Green” products are defined as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
2.Pulse Test: Pulse Width≤300µs, Duty Cycle ≤2%.
3.Device Mounted on FR-4 PCB, 1inch x 0.85inch x 0.062inch.
DIMENSIONS
MM
MIN MAX MIN MAX
0.012 0.020 0.30 0.50
0.051 0.070 1.30 1.80
0.087 0.126 2.20 3.20
INCHES
DIM
NOTE
A
B
C
D
G
H
J
K
L
M
0.037
0.074
0.95
1.90
TYP.
TYP.
Internal Structure and Marking Code
0.106 0.122 2.70 3.10
0.002 0.006 0.05 0.15
0.030 0.051 0.75 1.30
0.012 0.024 0.30 0.60
0.003 0.008 0.08 0.22
D
D
S
6
5
4
6
1
5
4
3
1003
2
1
2
3
D
D
G
Rev.3-2-12132022
1/5
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