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SIL03N10A PDF预览

SIL03N10A

更新时间: 2024-09-27 14:55:23
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
5页 526K
描述
Tape&Reel;

SIL03N10A 数据手册

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SIL03N10A  
Features  
High Density Cell Design for Low RDS(on)  
Trench Power HV MOSFET Technology  
Epoxy Meets UL 94 V-0 Flammability Rating  
Moisture Sensitivity Level 1  
N-CHANNEL  
Halogen Free.“Green” Device (Note 1)  
MOSFET  
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
Operating Junction Temperature Range : -55°C to +150°C  
Storage Temperature Range: -55°C to +150°C  
SOT23-6L  
Thermal Resistance: 83°C/W Junction to Ambient(Note 1)  
Thermal Resistance: 36°C/W Junction to Lead  
G
5
Parameter  
Rating  
100  
±20  
3
Symbol  
VDS  
Unit  
V
6
1
4
Drain-Source Voltage  
Gate-Source Volltage  
C
B
VGS  
V
2
3
TA=25°C  
TA=70°C  
A
A
H
ID  
Continuous Drain Current  
Pulsed Drain Current(Note 2)  
2.4  
A
IDM  
PD  
12  
A
M
K
Total Power Dissipation  
1.5  
W
J
D
L
Note :  
1.Halogen free "Green” products are defined as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
2.Pulse Test: Pulse Width≤300µs, Duty Cycle ≤2%.  
3.Device Mounted on FR-4 PCB, 1inch x 0.85inch x 0.062inch.  
DIMENSIONS  
MM  
MIN MAX MIN MAX  
0.012 0.020 0.30 0.50  
0.051 0.070 1.30 1.80  
0.087 0.126 2.20 3.20  
INCHES  
DIM  
NOTE  
A
B
C
D
G
H
J
K
L
M
0.037  
0.074  
0.95  
1.90  
TYP.  
TYP.  
Internal Structure and Marking Code  
0.106 0.122 2.70 3.10  
0.002 0.006 0.05 0.15  
0.030 0.051 0.75 1.30  
0.012 0.024 0.30 0.60  
0.003 0.008 0.08 0.22  
D
D
S
6
5
4
6
1
5
4
3
1003  
2
1
2
3
D
D
G
Rev.3-2-12132022  
1/5  
MCCSEMI.COM  

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