Datasheet > SIK04N65SL

SIK04N65SL

更新时间： 2024-11-26 01:21:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
5页	558K
描述
N-Ch Enhancement Mode Power MOSFET

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SIK04N65SL 数据手册

SIK04N65SL

4A , 650V , R_DS(ON)2.7

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-262

DESCRIPTION

The SIK04N65SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent R_DS(on)and gate charge for most of the synchronous

buck converter applications .

FEATURES

ꢀ

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

Drain

Millimeter

REF.

Min.

9.80

9.60

1.19

12.3

1.10

0.68

Max.

10.40

10.50

1.40

14.3

1.50

Min.

Max.

4.40

4.85

Gate

2.54 BSC

2.70 BSC

4.00 BSC

0.25

1.10

0.56

1.45

1.00

Source

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

650

±30

V_GS

T_C=25°C

Continuous Drain Current

Pulsed Drain Current

I_D

T_C=100°C

2.8

I_DM

P_D

T_C=25°C

Derate above 25°C

Total Power Dissipation

0.76

202

-55~150

Single Pulse Avalanche Energy ¹

E_AS

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

Maximum Thermal Resistance Junction-Case

Notes:

R_θJA

R_θJC

62.5

1.32

°C / W

1. L=30mH,I_AS=3.36A, V_DD=150V, R_G=25Ω, Starting T_J=25°C

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Dec -2013 Rev. A

Page 1 of 5

12 3 4 5

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