Datasheet > SiJ462ADP

SiJ462ADP

更新时间： 2024-11-22 14:54:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	246K
描述
N-Channel 60 V (D-S) MOSFET

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SiJ462ADP 数据手册

SiJ462ADP

Vishay Siliconix

www.vishay.com

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®SO-8L Single

• Very low Q_gand Q_ossreduce power

loss and improve efficiency

• Flexible leads provide resilience to

mechanical stress

• 100 % R_gand UIS tested

• Q_gd/Q_gsratio < 1 optimizes switching characteristics

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

• Synchronous rectification

• High power density DC/DC

_DS(on)max. (Ω) at V_GS= 10 V

_DS(on)max. (Ω) at V_GS= 4.5 V

0.0072

0.0110

• DC/AC inverters

Q_gtyp. (nC)

_D(A) ^a

• Boost converters

39.3

N-Channel MOSFET

• Motor drive control

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and halogen-free

SiJ462ADP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

39.3

31.4

15.8 ^{b, c}

12.6 ^{b, c}

100

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

20.2

3.2 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

11.25

22.3

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

14.2

Maximum power dissipation

P_D

3.6 ^{b, c}

2.3 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady state

4.5

5.6

°C/W

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

S19-1099-Rev. A, 30-Dec-2019

Document Number: 77286

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiJ462ADP相关器件

型号	品牌	获取价格	描述	数据表
SiJ462DP	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SiJ470DP	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SiJ478DP	VISHAY	获取价格	N-Channel 80 V (D-S) MOSFET
SiJ4819DP	VISHAY	获取价格	P-Channel 80 V (D-S) MOSFET
SIJ482DP	VISHAY	获取价格	N-Channel 80 V (D-S) MOSFET
SiJ494DP	VISHAY	获取价格	N-Channel 150 V (D-S) MOSFET
SiJ5623DP	VISHAY	获取价格	P-Channel 60 V (D-S) MOSFET
SiJA22DP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiJA52ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIJA52DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 60A PPAK SO-8L

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