Datasheet > SIJ482DP

SIJ482DP

更新时间： 2024-02-26 03:26:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	200K
描述
N-Channel 80 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIJ482DP 数据手册

New Product

SiJ482DP

Vishay Siliconix

N-Channel 80 V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

V_DS(V)

R_DS(on)() (Max.)

0.0062 at V_GS= 10 V

0.0065 at V_GS= 7.5 V

0.0095 at V_GS= 4.5 V

Q_g(Typ.)

100 % R_gand UIS Tested

Capable of Operating with 5 V Gate Drive

Material categorization:

_D(A)^{a, g}

24 nC

For definitions of compliance please see

www.vishay.com/doc?99912

PowerPAK^®SO-8L Single

APPLICATIONS

•

DC/DC Primary Side Switch

Synchronous Rectification

High Current Switching

N-Channel MOSFET

Ordering Information:

SiJ482DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

60^g

21.1^{b, c}

16.9^{b, c}

100

60^g

4.5^{b, c}

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L =0.1 mH

T_C= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

E_AS

69.4

_C= 70 °C

44.4

P_D

Maximum Power Dissipation

5^{b, c}

3.2^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

°C/W

Steady State

R_thJC

1.3

1.8

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

g. Package limited.

Document Number: 63728

S12-0544-Rev. A, 12-Mar-12

For technical support, please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SIJ482DP相关器件

型号	品牌	获取价格	描述	数据表
SiJ494DP	VISHAY	获取价格	N-Channel 150 V (D-S) MOSFET
SiJ5623DP	VISHAY	获取价格	P-Channel 60 V (D-S) MOSFET
SiJA22DP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiJA52ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIJA52DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 60A PPAK SO-8L
SiJA54ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA54DP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIJA54DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 60A PPAK SO-8L
SiJA58ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiJA72ADP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET

与SIJ482DP相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

9

产品中心

服务支持

精选活动

关于我们

帮助中心

SIJ482DP

SIJ482DP 数据手册

与SIJ482DP相关器件

与SIJ482DP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIJ482DP

SIJ482DP 数据手册

与SIJ482DP相关器件

与SIJ482DP相关文章

您还可以找

您在本页遇到什么问题？