Datasheet > SI7880DP

SI7880DP

更新时间： 2024-11-28 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	44K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

获取价格

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SI7880DP 数据手册

Si7880DP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

D PWM Optimized

PRODUCT SUMMARY

D New Low Thermal Resistance PowerPAKt Package with

Low 1.07-mm Profile

V_DS(V)

r_DS(on)(W)

I_D(A)

APPLICATIONS

0.003 @ V = 10 V

D DC/DC Converters

0.00425 @ V = 4.5 V

Low-Side MOSFET in Synchronous Buck in Desktops

D Secondary Synchronous Rectifier

PowerPAKt SO-8

6.15 mm

5.15 mm

N-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

Avalanche Current

L = 0.1 mH

Continuous Source Current (Diode Conduction)

4.5

5.4

3.4

1.6

1.9

1.2

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Case (Drain)

1.0

1.5

thJC

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71875

S-03768—Rev. B, 21-Apr-03

www.vishay.com

12 3 4 5

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