Datasheet > SI7892BDP-T1-E3

SI7892BDP-T1-E3

更新时间： 2024-11-28 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
1页	111K
描述
N-Channel, 30-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7892BDP-T1-E3 数据手册

Specification Comparison

Vishay Siliconix

Si7892BDP vs. Si7892DP

Description: N-Channel, 30-V (D-S) MOSFET

Package:

Pin Out:

PowerPAK® SO-8

Identical

Part Number Replacements:

Si7892BDP-T1-E3 Replaces Si7892DP-T1-E3

Si7892BDP-T1-E3 Replaces Si7892DP-T1

Summary of Performance:

The Si7892BDP is the replacement to the original Si7892DP; both parts perform identically, including limits to the parametric

tables below.

ABSOLUTE MAXIMUM RATINGS (T_A= 25^oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Si7892BDP

Si7892DP

Unit

Drain-Source Voltage

Gate-Source Voltage

+20

V_GS

T_A= 25°C

T_A= 70°C

Continuous Drain Current

Pulsed Drain Current

I_D

I_DM

I_S

Continuous Source Current

(MOSFET Diode Conduction)

4.1

4.5

L = 0.1 mH

5.4

3.4

Avalanche Current

I_AS

P_D

T_A= 25°C

T_A= 70°C

Power Dissipation

3.2

Operating Junction & Storage Temperature Range

Maximum Junction-to-Ambient

-55 to 150

°C

T_j& T_stg

R_thJA

°C/W

SPECIFICATIONS (T_J= 25^OC UNLESS OTHERWISE NOTED)

Si7892BDP

Si7892DP

Typ

Parameter

Symbol

Unit

Min

Typ

Max

Min

Max

Static

Gate-Threshold Voltage

1.0

3.0

+100

1.0

3.0

+100

µA

V_GS(th)

I_GSS

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

I_DSS

V_GS= 10 V

I_D(on)

0.0034

0.0047

0.0042

0.0057

0.0037

0.0048

0.0045

0.006

Drain-Source On-Resistance

Ω

r_DS(on)

V_GS= 4.5 V

Forward Transconductance

Diode Forward Voltage

g_fs

0.75

1.2

0.75

1.2

V_SD

Dynamic

Input Capacitance

3775

630

iss

Output Capacitance

oss

Reverse Transfer Capacitance

295

rss

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

11.4

8.1

6.7

9.7

0.5

1.2

2.0

0.5

2.4

Ω

Switching

t_d(on)

t_r

t_d(off)

t_f

Turn-On Time*

100

130

Turn-Off Time*

Source-Drain Reverse Recovery Time

t_rr

Document Number 74064

06-May-05

www.vishay.com

中文翻译

下载PDF

与SI7892BDP-T1-E3相关器件

型号	品牌	获取价格	描述	数据表
SI7892BDP-T1-GE3	VISHAY	获取价格	TRANSISTOR 15 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK,
SI7892DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7892DP-T1	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7892DP-T1-E3	VISHAY	获取价格	N-Channel, 30-V (D-S) MOSFET
SI7894ADP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7894ADP-T1-GE3	VISHAY	获取价格	TRANSISTOR 17 A, 30 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SI7894DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7898DP	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7898DP (KI7898DP)	KEXIN	获取价格	N-Channel MOSFET
SI7898DP_06	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET