是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 12 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5.2 W |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7886ADP | VISHAY |
获取价格 |
N-Channel 30-V D-S MOSFET | |
SI7886ADP-T1 | VISHAY |
获取价格 |
N-Channel 30-V D-S MOSFET | |
SI7886ADP-T1-E3 | VISHAY |
获取价格 |
N-Channel 30-V D-S MOSFET | |
SI7886DP | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI7886DP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 15 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener | |
SI7888DP | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI7888DP-E3 | VISHAY |
获取价格 |
TRANSISTOR 9.4 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener | |
SI7888DP-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI7888DP-T1-GE3 | VISHAY |
获取价格 |
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel | |
SI7892ADP-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |