Datasheet > Si7884BDP

Si7884BDP

更新时间： 2024-11-29 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	310K
描述
N-Channel 40-V (D-S) MOSFET

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Si7884BDP 数据手册

Si7884BDP

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^f

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

0.0075 at V_GS= 10 V

0.009 at V_GS= 4.5 V

RoHS

21 nC

COMPLIANT

APPLICATIONS

PowerPAK SO-8

•

Synchronous Rectifier

6.15 mm

5.15 mm

Bottom View

Ordering Information:

Si7884BDP-T1-E3 (Lead (Pb)-free)

Si7884BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

58^f

_C= 25 °C

_C= 70 °C

46^f

Continuous Drain Current (T_J= 150 °C)

I_D

18.5^{a, b}

14.8^{a, b}

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

Avalanche Current

Avalanche Energy

I_DM

I_AS

E_AS

38^f

3.8^{a, b}

L = 0.1 mH

_C= 25 °C

_A= 25 °C

_C= 25 °C

_C= 70 °C

Continuous Source-Drain Diode Current

I_S

Maximum Power Dissipation

P_D

4.6^{a, b}

3.0^{a, b}

- 55 to 150

260

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, e}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

2.2

2.7

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under Steady State conditions is 70 °C/W.

f. Calculation based on maximum allowable junction temperature. Package limitation current is 32 A.

Document Number: 68395

S-82113-Rev. B, 08-Sep-08

www.vishay.com

12 3 4 5 6 7...13

中文翻译

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与Si7884BDP相关器件

型号	品牌	获取价格	描述	数据表
SI7884BDP-T1-E3	VISHAY	获取价格	TRANSISTOR 18.5 A, 40 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPA
SI7884DP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI7884DP-T1	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7884DP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7884DP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7886ADP	VISHAY	获取价格	N-Channel 30-V D-S MOSFET
SI7886ADP-T1	VISHAY	获取价格	N-Channel 30-V D-S MOSFET
SI7886ADP-T1-E3	VISHAY	获取价格	N-Channel 30-V D-S MOSFET
SI7886DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7886DP-T1-E3	VISHAY	获取价格	TRANSISTOR 15 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener

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