Datasheet > SI7888DP-T1

SI7888DP-T1

更新时间： 2024-11-28 15:51:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	98K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
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SI7888DP-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	9.4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	5 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI7888DP-T1 数据手册

Si7888DP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

15.7

12.1

•

New Low Thermal Resistance PowerPAK^®

Available

0.012 at V_GS= 10 V

0.020 at V_GS= 4.5 V

Package with Low 1.07-mm Profile

RoHS*

COMPLIANT

•

Optimized for “High-Side” Synchronous

Rectifier Operation

100 % R_gTested

PowerPAK SO-8

APPLICATIONS

•

DC/DC Converters

6.15 mm

5.15 mm

Bottom View

Ordering Information: Si7888DP-T1

Si7888DP-T1—E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

15.7

12.5

9.4

7.5

Continuous Drain Current (T_J= 150 °C)^a

I_D

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Avalanche Current

I_DM

I_S

4.1

1.5

I_AS

E_AS

L = 0.1 mH

T_A= 25 °C

Single Pulse Avalanche Energy

5.0

3.2

1.8

1.1

Maximum Power Dissipation^a

P_D

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^b,c

T_J, T_stg

– 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 sec

Steady State

Maximum Junction-to-Ambient (MOSFET)^a

Maximum Junction-to-Case (Drain)

°C/W

R_thJC

2.4

3.0

Notes

a. Surface Mounted on 1" x 1" FR4 Board.

b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is

not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71876

S-52555-Rev. C, 19-Dec-05

www.vishay.com

12 3 4 5 6

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与SI7888DP-T1相关器件

型号	品牌	获取价格	描述	数据表
SI7888DP-T1-GE3	VISHAY	获取价格	N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
SI7892ADP-T1	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7892ADP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7892ADP-T1-GE3	VISHAY	获取价格	TRANSISTOR 25 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK,
SI7892BDP	VISHAY	获取价格	N-Channel, 30-V (D-S) MOSFET
SI7892BDP-T1-E3	VISHAY	获取价格	N-Channel, 30-V (D-S) MOSFET
SI7892BDP-T1-GE3	VISHAY	获取价格	TRANSISTOR 15 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK,
SI7892DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7892DP-T1	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7892DP-T1-E3	VISHAY	获取价格	N-Channel, 30-V (D-S) MOSFET

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