SI2303CDS

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	130K
描述
P-Channel 30-V (D-S) MOSFET

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SI2303CDS 数据手册

Si2303CDS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

MOSFET PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

100 % R_gTested

_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

0.190 at V_GS= - 10 V

0.330 at V_GS= - 4.5 V

- 2.7

100 % UIS Tested

RoHS

- 30

2 nC

COMPLIANT

- 2.1

APPLICATIONS

Load Switch

•

TO-236

(SOT-23)

Top View

Si2303CDS (N3)*

* Marking Code

Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

- 30

_C= 25 °C

T_C= 70 °C

_A= 25 °C

- 2.7

- 2.2

- 1.9^{b, c}

- 1.5^{b, c}

- 10

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

- 1.75

- 0.83^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

L = 0.1 mH

_C= 25 °C

T_C= 70 °C

_A= 25 °C

I_AS

Avalanche Current

- 5

E_AS

Single Pulse Avalanche Energy

1.25

2.3

1.5

P_D

Maximum Power Dissipation

1.0^{b, c}

0.7^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

≤ 5 s

Steady State

120

°C/W

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 160 °C/W.

Document Number: 69991

S-80798-Rev. A, 14-Apr-08

www.vishay.com

12 3 4 5 6 7

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