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SI1317DL-T1-GE3 PDF预览

SI1317DL-T1-GE3

更新时间: 2024-09-17 19:57:39
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
11页 252K
描述
P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel

SI1317DL-T1-GE3 技术参数

生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.4 A
最大漏极电流 (ID):1.4 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.5 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI1317DL-T1-GE3 数据手册

 浏览型号SI1317DL-T1-GE3的Datasheet PDF文件第2页浏览型号SI1317DL-T1-GE3的Datasheet PDF文件第3页浏览型号SI1317DL-T1-GE3的Datasheet PDF文件第4页浏览型号SI1317DL-T1-GE3的Datasheet PDF文件第5页浏览型号SI1317DL-T1-GE3的Datasheet PDF文件第6页浏览型号SI1317DL-T1-GE3的Datasheet PDF文件第7页 
New Product  
Si1317DL  
Vishay Siliconix  
P-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)c  
- 1.4  
Qg (Typ.)  
Definition  
0.150 at VGS = - 4.5 V  
0.192 at VGS = - 2.5 V  
0.270 at VGS = - 1.8 V  
TrenchFET® Power MOSFET  
100 % Rg Tested  
- 20  
4.3 nC  
- 1.3  
- 1.1  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Load Switch  
DC/DC Converters  
SOT-323  
SC-70 (3-LEADS)  
G
1
S
3
D
G
S
2
Top View  
Si1317DL (LK)*  
* Marking Code  
D
Ordering Information: Si1317DL-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
- 20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
8
T
C = 25 °C  
C = 70 °C  
- 1.4  
T
- 1.1  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 1.4a, b  
- 1.1a, b  
- 6  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
- 0.4  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
- 0.3  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
0.5  
0.3  
PD  
Maximum Power Dissipation  
W
0.4a, b  
0.3a, b  
- 50 to 150  
260  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
°C  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Based on TC = 25 °C.  
Document Number: 67194  
S10-2764-Rev. A, 29-Nov-10  
www.vishay.com  
1

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