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SI1400DL-T3 PDF预览

SI1400DL-T3

更新时间: 2024-01-25 16:14:04
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 67K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI1400DL-T3 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):1.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.568 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

SI1400DL-T3 数据手册

 浏览型号SI1400DL-T3的Datasheet PDF文件第2页浏览型号SI1400DL-T3的Datasheet PDF文件第3页浏览型号SI1400DL-T3的Datasheet PDF文件第4页浏览型号SI1400DL-T3的Datasheet PDF文件第5页 
Si1400DL  
Vishay Siliconix  
N-Channel 20-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.150 @ V = 4.5 V  
1.7  
1.3  
GS  
20  
0.235 @ V = 2.5  
GS  
V
SOT-363  
SC-70 (6-LEADS)  
D
D
G
1
6
D
D
S
Marking Code  
ND XX  
5
4
2
3
Lot Traceability  
and Date Code  
Part # Code  
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
GS  
V
V
"12  
T
= 25_C  
= 85_C  
1.6  
1.0  
1.7  
1.2  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
5
DM  
a
Continuous Source Current (Diode Conduction)  
I
0.8  
0.625  
0.40  
0.8  
S
T
= 25_C  
= 85_C  
0.568  
0.295  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
165  
180  
105  
200  
220  
130  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71179  
S-05630—Rev. B, 11-Feb-02  
www.vishay.com  
1

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