是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 1.6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.568 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI1401EDH | VISHAY |
获取价格 |
P-Channel 12 V (D-S) MOSFET |
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SI1401EDH-T1-GE3 | VISHAY |
获取价格 |
P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel |
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SI1402DH | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET |
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SI1402DH-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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SI1402DH-T1-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, |
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SI1403BDL | VISHAY |
获取价格 |
P-Channel 2.5-V (G-S) MOSFET |
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SI1403BDL-T1-E3 | VISHAY |
获取价格 |
P-Channel 2.5-V (G-S) MOSFET |
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SI1403CDL | VISHAY |
获取价格 |
P-Channel 20 V (D-S) MOSFET |
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SI1403CDL-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL |
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SI1403DL | VISHAY |
获取价格 |
P-Channel 2.5-V (G-S) MOSFET |
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