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SI1405BDH-T1-GE3 PDF预览

SI1405BDH-T1-GE3

更新时间: 2024-10-02 20:57:51
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
11页 238K
描述
Small Signal Field-Effect Transistor, 1.6A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

SI1405BDH-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:8 V最大漏极电流 (Abs) (ID):1.6 A
最大漏极电流 (ID):1.6 A最大漏源导通电阻:0.112 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.27 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1405BDH-T1-GE3 数据手册

 浏览型号SI1405BDH-T1-GE3的Datasheet PDF文件第2页浏览型号SI1405BDH-T1-GE3的Datasheet PDF文件第3页浏览型号SI1405BDH-T1-GE3的Datasheet PDF文件第4页浏览型号SI1405BDH-T1-GE3的Datasheet PDF文件第5页浏览型号SI1405BDH-T1-GE3的Datasheet PDF文件第6页浏览型号SI1405BDH-T1-GE3的Datasheet PDF文件第7页 
Si1405BDH  
Vishay Siliconix  
P-Channel 1.8 V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)c  
- 1.6  
Qg (Typ.)  
Definition  
TrenchFET® Power MOSFET  
Compliant to RoHS Directive 2002/95/EC  
0.112 at VGS = - 4.5 V  
0.160 at VGS = - 2.5 V  
0.210 at VGS = - 1.8 V  
- 8  
- 1.6  
3.67 nC  
- 1.6  
APPLICATIONS  
Load Switch for Portable Devices  
SOT-363  
SC-70 (6-LEADS)  
D
D
G
1
2
3
6
D
D
S
Marking Code  
BO XX  
5
4
Lot Traceability  
and Date Code  
Part #  
Code  
Top View  
Ordering Information: Si1405BDH-T1-E3 (Lead (Pb)-free)  
Si1405BDH-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 8  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
8
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
-1.6c  
- 1.6c  
- 1.6a, b, c  
- 1.6a, b, c  
- 8c  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
A
Pulsed Drain Current (10 µs Pulse Width)  
Continuous Source-Drain Diode Currenta, b  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
- 1.6c  
- 1.47a, b  
2.27  
1.45  
Maximum Power Dissipationa, b  
PD  
W
1.47a, b  
0.95a, b  
- 55 to 150  
260  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c, d  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
Maximum Junction-to-Ambienta, d  
Maximum Junction-to-Foot (Drain)  
t 5 s  
70  
44  
85  
55  
°C/W  
RthJF  
Steady State  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 5 s.  
c. Package limited.  
d. Maximum under steady state conditions is 125 °C/W.  
Document Number: 74634  
S10-0645-Rev. B, 22-Mar-10  
www.vishay.com  
1

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