是否无铅: | 不含铅 | 生命周期: | Obsolete |
零件包装代码: | SC-70 | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.44 |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 2.9 A | 最大漏极电流 (ID): | 2.9 A |
最大漏源导通电阻: | 0.07 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.56 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | PURE MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI1410EDH-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 2900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL |
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SI1411DH | VISHAY |
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P-Channel 150-V (D-S) MOSFET |
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SI1411DH_06 | VISHAY |
获取价格 |
P-Channel 150-V (D-S) MOSFET |
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SI1411DH-T1-E3 | VISHAY |
获取价格 |
P-Channel 150-V (D-S) MOSFET |
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SI1411DH-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 420 mA, 150 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL |
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SI1413DH | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET |
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SI1413DH-E3 | VISHAY |
获取价格 |
TRANSISTOR 2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN, FET General P |
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SI1413DH-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, |
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SI1413DH-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, |
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SI1413EDH | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET |
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