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SI1410EDH-T1-GE3 PDF预览

SI1410EDH-T1-GE3

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
11页 236K
描述
TRANSISTOR 2900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal

SI1410EDH-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.36配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):2.9 A
最大漏极电流 (ID):2.9 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.56 W
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1410EDH-T1-GE3 数据手册

 浏览型号SI1410EDH-T1-GE3的Datasheet PDF文件第2页浏览型号SI1410EDH-T1-GE3的Datasheet PDF文件第3页浏览型号SI1410EDH-T1-GE3的Datasheet PDF文件第4页浏览型号SI1410EDH-T1-GE3的Datasheet PDF文件第5页浏览型号SI1410EDH-T1-GE3的Datasheet PDF文件第6页浏览型号SI1410EDH-T1-GE3的Datasheet PDF文件第7页 
Si1410EDH  
Vishay Siliconix  
N-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
3.7  
Definition  
TrenchFET® Power MOSFETs: 1.8 V Rated  
ESD Protected: 2000 V  
Thermally Enhanced SC-70 Package  
Compliant to RoHS Directive 2002/95/EC  
0.070 at VGS = 4.5 V  
0.080 at VGS = 2.5 V  
0.100 at VGS = 1.8 V  
20  
3.4  
3.0  
APPLICATIONS  
Load Switching  
SOT-363  
SC-70 (6-LEADS)  
D
D
D
G
1
2
3
6
D
D
S
Marking Code  
1 kΩ  
AA XX  
G
5
4
Lot Traceability  
and Date Code  
Part # Code  
Top View  
S
Ordering Information: Si1410EDH-T1-E3 (Lead (Pb)-free)  
Si1410EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
20  
12  
V
VGS  
TA = 25 °C  
TA = 85 °C  
3.7  
2.6  
2.9  
2.0  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
Pulsed Drain Current  
Continuous Diode Current (Diode Conduction)a  
IDM  
IS  
8
1.4  
0.9  
1.0  
TA = 25 °C  
1.56  
0.81  
Maximum Power Dissipationa  
PD  
W
TA = 85 °C  
0.52  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
60  
Maximum  
Unit  
t 5 s  
80  
125  
45  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
Steady State  
Steady State  
100  
34  
°C/W  
RthJF  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 71409  
S10-0935-Rev. B, 19-Apr-10  
www.vishay.com  
1

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