Datasheet > SI1406DH_10

SI1406DH_10

更新时间： 2024-10-02 09:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	231K
描述
N-Channel 20 V (D-S) MOSFET

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SI1406DH_10 数据手册

Si1406DH

Vishay Siliconix

N-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3.9

Definition

0.065 at V_GS= 4.5 V

0.075 at V_GS= 2.5 V

0.096 at V_GS= 1.8 V

•

TrenchFET^®Power MOSFETs: 1.8 V Rated

Thermally Enhanced SC-70 Package

Compliant to RoHS Directive 2002/95/EC

3.6

3.2

APPLICATIONS

•

Load Switching

PA Switch

Level Switch

SOT-363

SC-70 (6-LEADS)

Marking Code

AB XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1406DH-T1-E3 (Lead (Pb)-free)

Si1406DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 85 °C

3.9

2.8

3.1

2.2

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

1.4

0.9

1.0

T_A= 25 °C

T_A= 85 °C

1.56

0.81

Maximum Power Dissipation^a

P_D

0.52

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 s

125

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

100

°C/W

R_thJF

Note:

a. Surface mounted on 1" x 1" FR4 board.

Document Number: 70684

S10-0935-Rev. C, 19-Apr-10

www.vishay.com

12 3 4 5 6 7...10

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