SI1403BDL

更新时间： 2024-10-02 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	131K
描述
P-Channel 2.5-V (G-S) MOSFET

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SI1403BDL 数据手册

New Product

Si1403BDL

Vishay Siliconix

P-Channel 2.5-V (G-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

- 1.5

- 1.4

- 1.2

Q_g(Typ)

0.150 at V_GS= - 4.5 V

0.175 at V_GS= - 3.6 V

0.265 at V_GS= - 2.5 V

RoHS

- 20

2.9

COMPLIANT

SOT-363

SC-70 (6-LEADS)

Marking Code

OD XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

T_A= 25 °C

T_A= 85 °C

- 1.5

- 1.2

- 1.4

- 1.0

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 5

Continuous Diode Current (Diode Conduction)^a

- 0.8

0.625

0.400

- 0.8

0.568

0.295

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

165

Maximum

200

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

180

220

°C/W

R_thJF

105

130

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 73253

S-71951-Rev. B, 10-Sep-07

www.vishay.com

12 3 4 5 6

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