SI1403CDL

更新时间： 2024-01-02 10:54:24

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	68K
描述
P-Channel 20 V (D-S) MOSFET

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SI1403CDL 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.89	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	1.4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.568 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI1403CDL 数据手册

SPICE Device Model Si1403CDL

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

DESCRIPTION

CHARACTERISTICS

The attached SPICE model describes the typical electrical

characteristics of the p-channel vertical DMOS. The

subcircuit model is extracted and optimized over the - 55 °C

to + 125 °C temperature ranges under the pulsed 0 V to 5 V

gate drive. The saturated output impedance is best fit at the

gate bias near the threshold voltage. A novel gate-to-drain

feedback capacitance network is used to model the gate

charge characteristics while avoiding convergence

difficulties of the switched C_gdmodel. All model parameter

values are optimized to provide a best fit to the measured

electrical data and are not intended as an exact physical

interpretation of the device.

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the - 55 °C to + 125 °C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse

Recovery Characteristics

SUBCIRCUIT MODEL SCHEMATIC

DBD

–

ETCV

Note

This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to

the appropriate datasheet of the same number for guaranteed specification limits.

Document Number: 67485

S11-0396-Rev. A, 14-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与SI1403CDL相关器件

型号	品牌	获取价格	描述	数据表
SI1403CDL-T1-GE3	VISHAY	获取价格	TRANSISTOR 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI1403DL	VISHAY	获取价格	P-Channel 2.5-V (G-S) MOSFET
SI1403DL-E3	VISHAY	获取价格	Transistor
SI1403DL-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI1403DL-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI1404BDH-T1-E3	VISHAY	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PI
SI1404BDH-T1-GE3	VISHAY	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
SI1404DH	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SI1405BDH	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET
SI1405BDH-T1-E3	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET

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