Datasheet > SI1401EDH

SI1401EDH

更新时间： 2024-10-02 09:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	262K
描述
P-Channel 12 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI1401EDH 数据手册

New Product

Si1401EDH

Vishay Siliconix

P-Channel 12 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

- 4

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

Typical ESD Performance 1500 V

0.034 at V_GS= - 4.5 V

0.046 at V_GS= - 2.5 V

0.070 at V_GS= - 1.8 V

0.110 at V_GS= - 1.5 V

•

- 4

- 12

14.1 nC

100 % R Tested

- 4

Compliant to RoHS Directive 2002/95/EC

- 4

APPLICATIONS

• Load Switch, PA Switch and Battery Switch for Portable

Devices

SOT-363

SC-70 (6-LEADS)

- Cellular Phone

- DSC

- Portable Game Console

- MP3

- GPS

Marking Code

B P X

X X X

Part # code

Lot Traceability

and Date code

Top View

Ordering Information: Si1401EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 12

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 4^a

_C= 25 °C

- 4^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 4^{a, b, c}

- 25

Pulsed Drain Current

I_DM

I_S

- 2.3

T_C= 25 °C

Continuous Source-Drain Diode Current

- 1.3^{b, c}

2.8

_A= 25 °C

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

1.8

Maximum Power Dissipation

P_D

1.6^{b, c}

1.0^{b, c}

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

Typical

Maximum

Unit

t  5 s

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

R_thJF

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 70080

S10-1537-Rev. A, 19-Jul-10

www.vishay.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与SI1401EDH相关器件

型号	品牌	获取价格	描述	数据表
SI1401EDH-T1-GE3	VISHAY	获取价格	P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel
SI1402DH	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI1402DH-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI1402DH-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SI1403BDL	VISHAY	获取价格	P-Channel 2.5-V (G-S) MOSFET
SI1403BDL-T1-E3	VISHAY	获取价格	P-Channel 2.5-V (G-S) MOSFET
SI1403CDL	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI1403CDL-T1-GE3	VISHAY	获取价格	TRANSISTOR 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI1403DL	VISHAY	获取价格	P-Channel 2.5-V (G-S) MOSFET
SI1403DL-E3	VISHAY	获取价格	Transistor