Datasheet > SI1402DH-T1-GE3

SI1402DH-T1-GE3

更新时间： 2024-10-02 21:14:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	100K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SI1402DH-T1-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.75	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI1402DH-T1-GE3 数据手册

Si1402DH

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3.4

Definition

0.077 at V_GS= 4.5 V

0.120 at V_GS= 2.5 V

•

TrenchFET^®Power MOSFET: 2.5 V Rated

Compliant to RoHS Directive 2002/95/EC

2.5

APPLICATIONS

Load Switch for Portable Applications

•

SOT-363

SC-70 (6-LEADS)

Marking Code

AE XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1402DH-T1-E3 (Lead (Pb)-free)

Si1402DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

3.4

2.7

2.2

Continuous Drain Current (T_J= 150 °C)^a

I_D

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

I_DM

I_S

1.2

0.8

0.95

0.6

T_A= 25 °C

1.45

0.94

Maximum Power Dissipation^a

P_D

T_A= 70 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

130

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

Steady State

°C/W

R_thJF

Notes:

a. Surface mounted on 1" x 1" FR4 board.

Document Number: 73328

S-10-0645-Rev. B, 22-Mar-10

www.vishay.com

12 3 4 5 6

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