Datasheet > SI1034CX

SI1034CX

更新时间： 2024-11-18 09:26:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	130K
描述
Dual N-Channel 20 V (D-S) MOSFET

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SI1034CX 数据手册

Si1034CX

Vishay Siliconix

Dual N-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)

0.5

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

Gate-Source ESD Protected: 1000 V

Compliant to RoHS Directive 2002/95/EC

0.396 at V_GS= 4.5 V

0.456 at V_GS= 2.5 V

0.546 at V_GS= 1.8 V

0.760 at V_GS= 1.5 V

•

0.2

0.75

0.2

0.05

APPLICATIONS

•

Load/Power Switching for Portable Devices

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

•

Battery Operated Systems

Power Supply Converter Circuits

SC-89

Marking Code

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

0.61^{a, b}

0.49^{a, b}

0.18^{a, b}

0.22^{a, b}

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source-Drain Diode Current

T_A= 25 °C

°C

Maximum Power Dissipation^a

P_D

0.14^{a, b}

- 55 to 150

_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

565

Unit

t 5 s

470

560

Maximum Junction-to-Ambient^b

°C/W

Steady State

675

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

Document Number: 67468

S11-0241-Rev. A, 14-Feb-11

www.vishay.com

12 3 4 5 6 7 8

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