Si1035X
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
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Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) ()
ID (mA)
200
5 at VGS = 4.5 V
7 at VGS = 2.5 V
9 at VGS = 1.8 V
10 at VGS = 1.5 V
8 at VGS = - 4.5 V
12 at VGS = - 2.5 V
15 at VGS = - 1.8 V
20 at VGS = - 1.5 V
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TrenchFET® Power MOSFET: 1.5 V Rated
Very Small Footprint
175
N-Channel
P-Channel
20
High-Side Switching
150
Low On-Resistance:
N-Channel, 5
P-Channel, 8
50
- 150
- 125
- 100
- 30
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Low Threshold: 0.9 V (typ.)
Fast Switching Speed: 45 ns (typ.)
1.5 V Operation
- 20
Gate-Source ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
BENEFITS
SC-89
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Ease in Driving Switches
S
1
1
2
3
6
5
4
D
1
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
G
G
2
1
Marking Code: M
Low Battery Voltage Operation
D
S
2
2
APPLICATIONS
Top View
Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)
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Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
N-Channel
P-Channel
Steady State
Parameter
Symbol
5 s
Steady State
20
5 s
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
V
VGS
5
TA = 25 °C
TA = 85 °C
190
140
180
130
- 155
- 110
- 145
- 105
Continuous Drain Current (TJ = 150 °C)a
ID
mA
Pulsed Drain Currentb
IDM
IS
650
- 650
Continuous Source Current (Diode Conduction)
450
280
145
380
250
130
- 450
280
- 380
250
T
A = 25 °C
A = 85 °C
Maximum Power Dissipationa
PD
mW
T
145
130
TJ, Tstg
ESD
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
- 55 to 150
2000
°C
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
www.vishay.com
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