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SI1035X_10 PDF预览

SI1035X_10

更新时间: 2024-11-20 09:26:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 131K
描述
Complementary N- and P-Channel 20 V (D-S) MOSFET

SI1035X_10 数据手册

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Si1035X  
Vishay Siliconix  
Complementary N- and P-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) ()  
ID (mA)  
200  
5 at VGS = 4.5 V  
7 at VGS = 2.5 V  
9 at VGS = 1.8 V  
10 at VGS = 1.5 V  
8 at VGS = - 4.5 V  
12 at VGS = - 2.5 V  
15 at VGS = - 1.8 V  
20 at VGS = - 1.5 V  
TrenchFET® Power MOSFET: 1.5 V Rated  
Very Small Footprint  
175  
N-Channel  
P-Channel  
20  
High-Side Switching  
150  
Low On-Resistance:  
N-Channel, 5  
P-Channel, 8   
50  
- 150  
- 125  
- 100  
- 30  
Low Threshold: 0.9 V (typ.)  
Fast Switching Speed: 45 ns (typ.)  
1.5 V Operation  
- 20  
Gate-Source ESD Protected: 2000 V  
Compliant to RoHS Directive 2002/95/EC  
BENEFITS  
SC-89  
Ease in Driving Switches  
S
1
1
2
3
6
5
4
D
1
Low Offset (Error) Voltage  
Low-Voltage Operation  
High-Speed Circuits  
G
G
2
1
Marking Code: M  
Low Battery Voltage Operation  
D
S
2
2
APPLICATIONS  
Top View  
Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)  
Replace Digital Transistor, Level-Shifter  
Battery Operated Systems  
Power Supply Converter Circuits  
Load/Power Switching Cell Phones, Pagers  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
N-Channel  
P-Channel  
Steady State  
Parameter  
Symbol  
5 s  
Steady State  
20  
5 s  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
V
VGS  
5
TA = 25 °C  
TA = 85 °C  
190  
140  
180  
130  
- 155  
- 110  
- 145  
- 105  
Continuous Drain Current (TJ = 150 °C)a  
ID  
mA  
Pulsed Drain Currentb  
IDM  
IS  
650  
- 650  
Continuous Source Current (Diode Conduction)  
450  
280  
145  
380  
250  
130  
- 450  
280  
- 380  
250  
T
A = 25 °C  
A = 85 °C  
Maximum Power Dissipationa  
PD  
mW  
T
145  
130  
TJ, Tstg  
ESD  
Operating Junction and Storage Temperature Range  
Gate-Source ESD Rating (HBM, Method 3015)  
- 55 to 150  
2000  
°C  
V
Notes:  
a. Surface mounted on FR4 board.  
b. Pulse width limited by maximum junction temperature.  
Document Number: 71426  
S10-2544-Rev. C, 08-Nov-10  
www.vishay.com  
1

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