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SI1039X-T1-GE3 PDF预览

SI1039X-T1-GE3

更新时间: 2024-11-18 20:10:55
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
5页 83K
描述
P-CHANNEL 1.8-V (G-S) MOSFET- LEAD FREE - Tape and Reel

SI1039X-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-89包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.44
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):0.87 A
最大漏极电流 (ID):0.87 A最大漏源导通电阻:0.165 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.21 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1039X-T1-GE3 数据手册

 浏览型号SI1039X-T1-GE3的Datasheet PDF文件第2页浏览型号SI1039X-T1-GE3的Datasheet PDF文件第3页浏览型号SI1039X-T1-GE3的Datasheet PDF文件第4页浏览型号SI1039X-T1-GE3的Datasheet PDF文件第5页 
Si1039X  
Vishay Siliconix  
P-Channel 1.8 V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)  
- 0.95  
- 0.82  
- 0.67  
Definition  
0.165 at VGS = - 4.5 V  
0.220 at VGS = - 2.5 V  
0.280 at VGS = - 1.8 V  
TrenchFET® Power MOSFET  
Low Threshold  
Smallest LITTLE FOOT® Package:  
1.6 mm x 1.6 mm  
- 12  
Low 0.6 mm Profile  
SC-89 (6-LEADS)  
Compliant to RoHS Directive 2002/95/EC  
D
D
G
1
2
3
6
5
D
D
S
APPLICATIONS  
Cell Phones and Pagers  
- Load Switch  
Marking Code  
WL  
O
Lot Traceability  
and Date Code  
4
Part Number Code  
Top View  
Ordering Information: Si1039X-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 12  
8
V
VGS  
TA = 25 °C  
A = 70 °C  
- 0.95  
- 0.76  
- 0.87  
- 0.69  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
A
IDM  
IS  
Pulsed Drain Current  
- 4  
Continuous Diode Current (Diode Conduction)a  
- 0.18  
0.21  
- 0.14  
0.17  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
0.13  
0.10  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
500  
Maximum  
600  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
RthJA  
°C/W  
Steady State  
600  
720  
Notes:  
a. Surface mounted on 1" x 1" FR4 board with minimum copper.  
Document Number: 70682  
S10-2544-Rev. D, 08-Nov-10  
www.vishay.com  
1

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