Datasheet > SI1035X_08

SI1035X_08

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	128K
描述
Complementary N- and P-Channel 20-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI1035X_08 数据手册

Si1035X

Vishay Siliconix

Complementary N- and P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFET: 1.5 V Rated

Very Small Footprint

V_DS(V)

R_DS(on)(Ω)

I_D(mA)

200

5 at V_GS= 4.5 V

7 at V_GS= 2.5 V

9 at V_GS= 1.8 V

10 at V_GS= 1.5 V

8 at V_GS= - 4.5 V

12 at V_GS= - 2.5 V

15 at V_GS= - 1.8 V

20 at V_GS= - 1.5 V

RoHS

COMPLIANT

175

High-Side Switching

N-Channel

P-Channel

150

Low On-Resistance:

N-Channel, 5 Ω

P-Channel, 8 Ω

- 150

- 125

- 100

- 30

•

Low Threshold: 0.9 V (typ.)

Fast Switching Speed: 45 ns (typ.)

1.5 V Operation

- 20

Gate-Source ESD Protected: 2000 V

BENEFITS

•

Ease in Driving Switches

SC-89

Low Offset (Error) Voltage

Low-Voltage Operation

High-Speed Circuits

Low Battery Voltage Operation

Marking Code: M

APPLICATIONS

•

Replace Digital Transistor, Level-Shifter

Battery Operated Systems

Top View

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Ordering Information: Si1035X-T1-E3 (Lead (Pb)-free)

Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

N-Channel

P-Channel

Steady State

Parameter

Symbol

5 s

Steady State

5 s

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

T_A= 25 °C

T_A= 85 °C

190

140

180

130

- 155

- 110

- 145

- 105

Continuous Drain Current (T_J= 150 °C)^a

I_D

Pulsed Drain Current^b

I_DM

I_S

650

- 650

Continuous Source Current (Diode Conduction)

450

280

145

380

250

130

- 450

280

- 380

250

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

145

130

T_J, T_stg

ESD

Operating Junction and Storage Temperature Range

Gate-Source ESD Rating (HBM, Method 3015)

- 55 to 150

2000

°C

Notes:

a. Surface Mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

Document Number: 71426

S-80643-Rev. B, 24-Mar-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与SI1035X_08相关器件

型号	品牌	获取价格	描述	数据表
SI1035X_10	VISHAY	获取价格	Complementary N- and P-Channel 20 V (D-S) MOSFET
SI1035X-E3	VISHAY	获取价格	Transistor
SI1035X-T1-E3	VISHAY	获取价格	Complementary N- and P-Channel 20-V (D-S) MOSFET
SI1035X-T1-GE3	VISHAY	获取价格	Complementary N- and P-Channel 20-V (D-S) MOSFET
SI1036	ETC	获取价格	WIRELESS PRODUCT SELECTOR GUIDE
SI1036-A-GM	SILICON	获取价格	Ultra Low Power 128K, LCD MCU Family
Si1036X	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SI1037	ETC	获取价格	WIRELESS PRODUCT SELECTOR GUIDE
SI1037-A-GM	SILICON	获取价格	Ultra Low Power 128K, LCD MCU Family
SI1037X	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET