Datasheet > SI1034X_08

SI1034X_08

更新时间： 2024-11-18 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	111K
描述
N-Channel 20-V (D-S) MOSFET

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SI1034X_08 数据手册

Si1034X

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFET: 1.5 V Rated

V_DS(V)

R_DS(on)(Ω)

I_D(mA)

200

5 at V_GS= 4.5 V

7 at V_GS= 2.5 V

9 at V_GS= 1.8 V

10 at V_GS= 1.5 V

RoHS

Low-Side Switching

COMPLIANT

175

Low On-Resistance: 5 Ω

150

Low Threshold: 0.9 V (typ.)

Fast Switching Speed: 35 ns (typ.)

1.5 V Operation

Gate-Source ESD Protected: 2000 V

SC-89

BENEFITS

•

Ease in Driving Switches

Low Offset (Error) Voltage

Low-Voltage Operation

High-Speed Circuits

Marking Code: L

Low Battery Voltage Operation

Top View

APPLICATIONS

Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free)

Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free)

•

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

•

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 85 °C

190

140

180

130

Continuous Drain Current (T_J= 150 °C)^a

I_D

Pulsed Drain Current^b

I_DM

I_S

650

Continuous Source Current (Diode Conduction)

450

280

145

380

250

130

_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

T_J, T_stg

ESD

Operating Junction and Storage Temperature Range

Gate-Source ESD Rating (HBM, Method 3015)

- 55 to 150

2000

°C

Notes:

a. Surface Mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

Document Number: 71427

S-80643-Rev. B, 24-Mar-08

www.vishay.com

12 3 4 5

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