Si1040X
Vishay Siliconix
Load Switch with Level-Shift
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
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Halogen-free Option Available
TrenchFET® Power MOSFET
1.8 to 8 V Input
VDS2 (V)
RDS(on) (Ω)
ID (A)
0.43
0.36
0.3
0.625 at VIN = 4.5 V
0.890 at VIN = 2.5 V
1.25 at VIN = 1.8 V
RoHS
1.8 to 8
COMPLIANT
1.5 to 8 V Logic Level Control
Smallest LITTLE FOOT® Package: 1.6 mm x 1.6 mm
2000 V ESD Protection On Input Switch, VON/OFF
Adjustable Slew-Rate
Si1040X
4
5
2, 3
6
D2
S2
Q2
DESCRIPTION
The Si1040X includes a P- and N-Channel MOSFET in a
single SC89-6 package. The low on-resistance P-Channel
TrenchFET is tailored for use as a load switch. The
N-Channel, with an external resistor, can be used as a
level-shift to drive the P-Channel load-switch. The
N-Channel MOSFET has internal ESD protection and can be
driven by logic signals as low as 1.5 V. The Si1040X
operates on supply lines from 1.8 V to 8 V, and can drive
loads up to 0.43 A.
R1, C1
Q1
ON/OFF
1
R2
SC89-6
Top View
R2
D2
D2
R1, C1
ON/OFF
S2
1
2
3
6
5
Marking Code
P
WL
Lot Traceability
and Date Code
4
Part Number Code
Ordering Information:Si1040X-T1-E3 (Lead (Pb)-free)
Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free)
TYPICAL APPLICATION CIRCUIT
Switching Variation R2 at V = 2.5 V, R1 = 20 kΩ
Si1040X
IN
20
16
12
8
2, 3
6
t
f
4
6
V
OUT
V
IN
Q2
R1
C1
I
= 0.36 A
L
V
= 3 V
ON/OFF
C = 10 µF
i
C
o
= 1 µF
5
t
r
ON/OFF
LOAD
C
o
t
d(off)
Q1
4
t
d(on)
C
i
0
1
0
2
4
6
8
10
R2
R2 (kΩ)
Note: For R2 switching variations with other V /R1
IN
GND
R2
combinations See Typical Characteristics
Document Number: 71809
S-80641-Rev. C, 24-Mar-08
www.vishay.com
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