Datasheet > Si1036X

Si1036X

更新时间： 2024-11-19 14:55:07

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威世 - VISHAY		/
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描述
Dual N-Channel 30 V (D-S) MOSFET

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Si1036X 数据手册

Si1036X

Vishay Siliconix

www.vishay.com

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

0.540 at V_GS= 4.5 V

0.600 at V_GS= 2.5 V

0.700 at V_GS= 1.8 V

1.100 at V_GS= 1.5 V

I_D(A)

0.5

Q_g(TYP.)

• 100 % R_gtested

• Gate-source ESD protected: 1000 V

0.2

0.72 nC

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

0.2

0.05

APPLICATIONS

SC-89 Dual (6 leads)

S₂

• Load switch

G₂

• High speed switching

D₁

• DC/DC converters / boost converters

• For smart phones, tablet PCs and mobile computing

D₂

D₁

D₂

G₁

G₂

S₁

G₁

Top View

Marking Code: B

Ordering Information:

Si1036X-T1-GE3 (Lead (Pb)-free and Halogen-free)

S₂

S₁

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

0.61 ^a,b

0.49 ^a,b

0.18 ^a,b

0.22 ^a,b

0.14 ^a,b

Continuous Drain Current (T_J= 150 °C) ^a

I_D

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

Continuous Source-Drain Diode Current

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation ^a

P_D

°C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

470

MAX.

565

UNIT

t  5 s

Maximum Junction-to-Ambient ^b

R_thJA

°C/W

Steady State

560

675

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

S14-0147-Rev. A, 27-Jan-14

Document Number: 62932

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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