SHD2264C

更新时间： 2024-11-24 13:13:31

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SENSITRON		晶体晶体管功率场效应晶体管局域网
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2页	34K
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SHD2264C 数据手册

SENSITRON

SHD225604

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 552, REV. -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:

•

200 Volt, 0.045 Ohm, 50A MOSFET

Isolated Hermetic Metal Package

Low R_{DS (on)}

MAXIMUM RATINGS

ALL RATINGS ARE AT T_C= 25°C UNLESS OTHERWISE SPECIFIED.

RATING

SYMBOL

V_GS

MIN.

-55

TYP.

MAX.

±20

200

+150

270

0.45

UNITS

Volts

Amps

°C

Watts

°C/W

GATE TO SOURCE VOLTAGE

ON-STATE DRAIN CURRENT

PULSED DRAIN CURRENT

OPERATING AND STORAGE TEMPERATURE

TOTAL DEVICE DISSIPATION

THERMAL RESISTANCE, JUNCTION TO CASE

I_D25

I_DM

T_J/T_STG

P_D

R_thJC

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNITS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

200

Volts

V_GS= 0V, I_D= 250μA

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

R_DS(ON)

0.045

4.0

V_GS= 10V, I_D= 0.5I_D25

GATE THRESHOLD VOLTAGE V_DS= V_GS, I_D= 4.0 mA

FORWARD TRANSCONDUCTANCE

V_DS= 10V, I_D= 0.5I_D25

V_GS(th)

g_fs

2.0

Volts

S(1/Ω)

ZERO GATE VOLTAGE DRAIN CURRENT

V_DS= 0.8 x Max. rating, V_GS= 0V, T_J= 25°C

T_J= 125°C

I_DSS

I_GSS

200

1000

μA

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

TURN ON DELAY TIME

V_GS= 20V

V_GS= -20V

V_DS= 0.5V•

100

-100

t_d(ON)

t_r

t_d(OFF)

t_f

nsec

RISE TIME

V_DSS, I_D= 0.5•I_D25

TURN OFF DELAY TIME

FALL TIME

V_GS=10V

R_G= 1.0Ω

DIODE FORWARD VOLTAGE

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

REVERSE RECOVERY TIME

I_F= I_S, V_GS= 0V

V_SD

1.5

Volts

nsec

200

T_J= 25°C,

I_F=25A, V_R= 100V

di/dt = 100A/μsec

V_GS= 0 V,

t_rr

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

C_iss

C_oss

C_rss

4400

800

280

_DS= 25 V,

f = 1.0MHz

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