5秒后页面跳转
SHD231009 PDF预览

SHD231009

更新时间: 2024-11-17 06:11:31
品牌 Logo 应用领域
SENSITRON 晶体小信号场效应晶体管
页数 文件大小 规格书
2页 148K
描述
HERMETIC P-CHANNEL JFET

SHD231009 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DLCC
包装说明:CHIP CARRIER, R-CQCC-N3针数:3
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N配置:SINGLE
最大漏源导通电阻:75 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):7 pFJESD-30 代码:R-CQCC-N3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SHD231009 数据手册

 浏览型号SHD231009的Datasheet PDF文件第2页 
SHD231009  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4305, REV -  
HERMETIC P-CHANNEL JFET  
FEATURES: 30 V, 75 , 30 mA P-Channel JFET  
Hermetically Sealed  
Surface Mount Package: Ceramic LCC-3  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
SYMBOL  
VGS  
IDSS  
BVGD  
MIN.  
TYP.  
MAX.  
30  
-90  
UNITS  
V
mA  
V
°C  
°C/W  
W
GATE TO SOURCE VOLTAGE ID = 1µA, VDS = 0V  
SATURATED DRAIN CURRENT VGS = 0V, VDS = -18V  
GATE TO DRAIN BREAKDOWN VOLTAGE  
OPERATING AND STORAGE TEMPERATURE  
TERMAL RESISTANCE JUNCTION TO CASE  
-
-30  
-
-55  
-
-
-
-
-
-
-
30  
TOP/TSTG  
+175  
300  
0.5  
RθJC  
PD  
-
TOTAL DEVICE DISSIPATION @ TC = 25°C  
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE ON STATE RESISTANCE  
VGS = 0V, ID = -1 mA  
RDS(ON)  
VGS(OFF)  
-
-
-
5
75  
10  
GATE SOURCE CUT OFF VOLTAGE  
V
VDS = -15V, ID = -1 nA  
COMMON SOURCE TRANSCONDUCTANCE  
VDS = -15V, ID = -1 mA  
DRAIN CUT OFF CURRENT,  
VDS = -15V, VGS = 12V TA = 25°C  
TA = 125°C  
gfs  
-
-
-
4.5  
- 10  
-
S(1/)  
pA  
ID(OFF)  
- 500  
- 1  
- 0.02  
µA  
GATE REVERSE CURRENT  
TA = 125°C  
TURN ON DELAY TIME  
RISE TIME  
TURN OFF DELAY TIME  
FALL TIME  
VGS = 20V  
IGSS  
-
-
-
5
0.01  
6
10  
6
15  
- 0.7  
500  
1
-
pA  
µA  
VDD = - 10V,  
ID = - 15 mA,  
RG = 100,  
td(ON)  
tr  
td(OFF)  
tf  
ns  
V
GS = 20V  
IG = - 1 mA  
DS = 0V  
GATE SOURCE FORWARD VOLTAGE  
VGS(F)  
-
-
-
- 1  
25  
7
V
V
INPUT CAPACITANCE VGS = 0V, VDS = -15V, f = 1MHz  
Ciss  
Crss  
20  
5
pF  
pF  
REVERSE TRANSFER CAPACITANCE  
VGS = 12V, VDS = 0V, f = 1MHz  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

与SHD231009相关器件

型号 品牌 获取价格 描述 数据表
SHD232008 SENSITRON

获取价格

Power Field-Effect Transistor, 250V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
SHD234001 SENSITRON

获取价格

Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 4-Element, N-Channel, Silicon, Metal
SHD23401 SENSITRON

获取价格

Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 4-Element, N-Channel, Silicon, Metal
SHD23401S SENSITRON

获取价格

Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 4-Element, N-Channel, Silicon, Metal
SHD239409 SENSITRON

获取价格

HERMETIC POWER MOSFET P-CHANNEL
SHD239501 SENSITRON

获取价格

POWER MOSFETS
SHD239502 SENSITRON

获取价格

HERMETIC POWER MOSFET N-CHANNEL
SHD239503 SENSITRON

获取价格

POWER MOSFETS
SHD239504 SENSITRON

获取价格

POWER MOSFETS
SHD239505 SENSITRON

获取价格

POWER MOSFETS