SHD239502

更新时间： 2024-09-21 04:04:51

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	59K
描述
HERMETIC POWER MOSFET N-CHANNEL

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数据手册

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SHD239502 数据手册

SENSITRON

SEMICONDUCTOR

SHD239502

TECHNICAL DATA

DATA SHEET 293, REV. A

HERMETIC POWER MOSFET

N-CHANNEL

DESCRIPTION: A 100 VOLT, 0.07 OHM MOSFET IN A HERMETIC SHD-5B PACKAGE.

MAXIMUM RATINGS

ALL RATINGS ARE AT T_A= 25C UNLESS OTHERWISE SPECIFIED.

RATING

SYMBOL

V_GS

I_D

I_DM

T_OP/T_STG

MIN.

-55

TYP.

MAX.

136

+150

0.39

320

UNITS

Volts

Amps

GATE TO SOURCE VOLTAGE

CONTINUOUS DRAIN CURRENT

PULSED DRAIN CURRENT

OPERATING AND STORAGE TEMPERATURE

TERMAL RESISTANCE JUNCTION TO CASE

TOTAL DEVICE DISSIPATION @ T_C= 25C

@ T_C= 25C

@ T_C= 100C

Amps(pk)

C/W

Watts

P_D

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

V_GS(TH)

R_DS(ON)

100

Volts

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 250mA

DRAIN TO SOURCE ON STATE RESISTANCE

V_GS= 10Vdc, I_D= 21A

2.0

4.0

0.07

GATE THRESHOLD VOLTAGE

PULSE TEST, t 300 ms, DUTY CYCLE d 2%

ZERO GATE VOLTAGE DRAIN CURRENT

V_DS= 0.8xMax. Rating, V_GS= 0Vdc

V_DS= 0.8xMax. Rating

I_DSS

250

V_GS= 0Vdc, T_J= 125C

I_GSS

GATE TO BODY LEAKAGE CURRENT

V_GS= 20Vdc,

100

TOTAL GATE CHARGE

GATE TO SOURCE CHARGE V_DS= 0.5V Max. Rating,

GATE TO DRAIN CHARGE

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

V_GS= 10 Vdc

Q_g

Q_gs

Q_gd

t_d(ON)

t_r

t_d(OFF)

t_f

8.0

125

I_D= 27.4A

V_DD= 50V,

I_D= 34A,

nsec

190

170

130

1.8

R_G= 2.35W

V_SD

Volts

nsec

FORWARD VOLTAGE

T_J= 25C, I_S= 34A, V_GS= 0V

PULSE TEST, t 300 ms, DUTY CYCLE d 2%

REVERSE RECOVERY TIME

REVERSE RECOVERY CHARGE

I_F= 34A

di/dt = 100A/msec

V_DD 50V

t_rr

500

Q_rr

C_iss

C_oss

C_rss

2.9

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

V_DS= 25 Vdc,

V_GS= 0 Vdc,

f = 1 MHz

3700

1100

200

221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798

World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com

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