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SHD248305 PDF预览

SHD248305

更新时间: 2024-09-21 21:18:11
品牌 Logo 应用领域
SENSITRON 开关晶体管
页数 文件大小 规格书
3页 56K
描述
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

SHD248305 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:CHIP CARRIER, R-XQCC-N18针数:18
Reach Compliance Code:compliant风险等级:5.84
外壳连接:SOURCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):2.5 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XQCC-N18湿度敏感等级:1
元件数量:1端子数量:18
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SHD248305 数据手册

 浏览型号SHD248305的Datasheet PDF文件第2页浏览型号SHD248305的Datasheet PDF文件第3页 
SENSITRON  
SEMICONDUCTOR  
SHD248305  
Technical Data  
Datasheet 4195, Rev. -  
HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
·
·
·
·
500 Volt, 1.5 Ohm, 1.5A MOSFET  
Fast Switching  
Low RDS (on)  
Electrically Equivalent to IRFE430  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
GATE TO SOURCE VOLTAGE  
SYMBOL  
VGS  
MIN.  
-
TYP.  
-
MAX.  
±20  
2.5  
1.6  
+150  
22  
UNITS  
Volts  
ID  
ID  
-
-
-
-
-
-
Amps  
Amps  
°C  
Watts  
°C/W  
ON-STATE DRAIN CURRENT  
ON-STATE DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
@ TC = 25°C  
@ TC = 100°C  
-
-55  
-
TOP/TSTG  
PD  
TOTAL DEVICE DISSIPATION @ TC = 25°C  
THERMAL RESISTANCE, JUNCTION TO CASE  
-
5.8  
RqJC  
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
RDS(ON)  
500  
-
-
-
-
Volts  
VGS = 0V, ID = 1.0mA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
VGS = 10V, ID = 1.6A  
1.5  
W
VGS(th)  
gfs  
2.0  
1.5  
-
-
4.0  
-
Volts  
GATE THRESHOLD VOLTAGE  
FORWARD TRANSCONDUCTANCE  
VDS = 15V, IDS = 1.6A  
VDS = VGS, ID = 250mA  
S(1/W)  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 0.8xMax. Max. Rating, VGS = 0V  
-
-
IDSS  
IGSS  
25  
250  
100  
-100  
30  
40  
55  
30  
mA  
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125°C  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
TURN ON DELAY TIME  
VGS = 20V  
VGS = -20V  
VDD = 250V,  
ID = 2.5A,  
-
-
-
-
nA  
td(ON)  
RISE TIME  
tr  
td(OFF)  
tf  
nsec  
TURN OFF DELAY TIME  
FALL TIME  
RG = 7.5W  
TOTAL GATE CHARGE  
GATE TO SOURCE CHARGE  
GATE TO DRAIN CHARGE  
DIODE FORWARD VOLTAGE  
ID = 2.5A,  
VGS = 10V,  
VDS =0.5xMax. Rating  
TC = 25°C, IS = 2.5A,  
VGS = 0V  
Qg  
Qgs  
Qgd  
VSD  
19.8  
2.2  
5.5  
-
-
-
-
-
29.5  
4.6  
19.7  
1.4  
nC  
nC  
nC  
Volts  
QRR  
trr  
-
-
-
-
7.0  
REVERSE RECOVERY CHARGE  
TJ = 25°C,  
mC  
nsec  
pF  
di/dt £ 100A/msec, VDD £ 50V  
900  
REVERSE RECOVERY TIME  
TJ = 25°C,  
IF = 2.5A,  
di/dt £ 100A/msec, VDD £ 50V  
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
VGS = 0 V  
VDS = 25 V  
f = 1.0MHz  
Ciss  
Coss  
Crss  
-
610  
135  
65  
-
· 221 WEST INDUSTRY COURT · DEER PARK, NY 11729-4681 · PHONE (631) 586-7600 · FAX (631) 242-9798 ·  
· World Wide Web Site - http://www.sensitron.com · E-mail Address- sales@sensitron.com ·  

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