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SHD248704 PDF预览

SHD248704

更新时间: 2024-09-21 21:21:39
品牌 Logo 应用领域
SENSITRON 开关脉冲晶体管
页数 文件大小 规格书
2页 199K
描述
Power Field-Effect Transistor, 5A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

SHD248704 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:CHIP CARRIER, R-CQCC-N18针数:18
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84其他特性:FAST SWITCHING
配置:SINGLE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.18 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CQCC-N18JESD-609代码:e0
元件数量:1端子数量:18
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):22 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SHD248704 数据手册

 浏览型号SHD248704的Datasheet PDF文件第2页 
SENSITRON  
SEMICONDUCTOR  
SHD248704  
TECHNICAL DATA  
DATA SHEET 4252, REV. -  
HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
100 Volt, .18 Ohm, 5A MOSFET  
Fast Switching  
Low RDS (on)  
Characterized at VGS of 6V  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
SYMBOL  
VGS  
MIN.  
-
-
-
-55  
-
TYP.  
MAX.  
±20  
5
20  
+150  
22  
UNITS  
Volts  
Amps  
Amps  
GATE TO SOURCE VOLTAGE  
ON-STATE DRAIN CURRENT  
PULSED DRAIN CURRENT  
-
-
-
-
-
-
ID  
IDM  
TJ/TSTG  
PD  
RthJC  
@ TC = 25°C  
OPERATING AND STORAGE TEMPERATURE  
°C  
Watts  
TOTAL DEVICE DISSIPATION @ TC = 25°C  
THERMAL RESISTANCE, JUNCTION TO CASE  
-
5.8  
°C/W  
Volts  
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
100  
-
-
-
-
V
GS = 0V, ID = 250µA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
VGS = 10V, ID = 3.6A  
RDS(ON)  
0.18  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
V
GS = 6V, ID = 2.4A  
RDS(ON)  
VGS(th)  
-
-
-
0.20  
4.0  
Volts  
GATE THRESHOLD VOLTAGE  
250µA  
VDS = VGS, ID =  
2.0  
FORWARD TRANSCONDUCTANCE  
VDS = 15V; IDS = 3.6A  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 0.8 x Max. rating, VGS = 0V  
TJ = 125°C  
VGS  
gfs  
-
7
-
S(1/)  
IDSS  
IGSS  
-
-
-
-
1
100  
100  
-100  
µA  
GATE TO SOURCE LEAKAGE FORWARD  
20V  
=
nA  
GATE TO SOURCE LEAKAGE REVERSE  
TURN ON DELAY TIME  
RISE TIME  
TURN OFF DELAY TIME  
FALL TIME  
VGS = -20V  
VDD = 50V,  
ID = 3.6A,  
RG = 6Ω  
td(ON)  
-
-
30  
30  
40  
30  
tr  
td(OFF)  
tf  
nsec  
Volts  
DIODE FORWARD VOLTAGE  
IS = 7.4A, VGS = 0V  
VSD  
-
-
-
-
-
1.5  
Pulse test, t 300 µs, duty cycle d 2  
%
REVERSE RECOVERY TIME  
TJ = 25°C,  
If = 3.6A  
trr  
80  
-
nsec  
pF  
di/dt 100A/µsec  
VGS = 0 V  
INPUT CAPACITANCE  
Ciss  
Coss  
Crss  
370  
60  
30  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
V
DS = 25 V  
f = 1.0MHz  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com •  

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