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SHD280502 PDF预览

SHD280502

更新时间: 2024-09-21 09:26:39
品牌 Logo 应用领域
SENSITRON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
3页 66K
描述
HERMETIC POWER MOSFET N-CHANNEL

SHD280502 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):38 A
最大漏源导通电阻:0.055 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SHD280502 数据手册

 浏览型号SHD280502的Datasheet PDF文件第2页浏览型号SHD280502的Datasheet PDF文件第3页 
SENSITRON  
SEMICONDUCTOR  
SHD280502  
TECHNICAL DATA  
DATA SHEET 4065, REV. -  
HERMETIC POWER MOSFET  
N-CHANNEL  
DESCRIPTION: A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE.  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.  
RATING  
GATE TO SOURCE VOLTAGE  
CONTINUOUS DRAIN CURRENT  
SYMBOL  
MIN.  
-
-
TYP.  
-
-
MAX.  
UNITS  
Volts  
Amps  
VGS  
ID  
–20  
38  
24  
150  
+150  
0.83  
150  
@ TC = 25•C  
@ TC = 100•C  
@ TC = 25•C  
IDM  
TOP/TSTG  
-
-55  
-
-
-
-
-
Amps(pk)  
PULSED DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
TERMAL RESISTANCE JUNCTION TO CASE  
TOTAL DEVICE DISSIPATION @ TC = 25•C  
•C  
•C/W  
Watts  
R
JC  
PD  
-
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
VGS(TH)  
RDS(ON)  
100  
-
-
-
-
-
Volts  
VGS = 0V, ID = 1.0mA  
VDS = VGS, ID = 250mA  
DRAIN TO SOURCE ON STATE RESISTANCE  
VGS = 10Vdc, ID = 24A  
2.0  
4.0  
GATE THRESHOLD VOLTAGE  
-
-
0.055  
W
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 0.8xMax. Rating, VGS = 0Vdc  
VDS = 0.8xMax. Rating  
IDSS  
25  
mA  
250  
VGS = 0Vdc, TJ = 125•C  
IGSS  
-
-
-
nA  
nC  
GATE TO BODY LEAKAGE CURRENT  
VGS = –20Vdc,  
–100  
TOTAL GATE CHARGE  
GATE TO SOURCE CHARGE VDS = 0.5V Max. Rating,  
GATE TO DRAIN CHARGE  
TURN ON DELAY TIME  
RISE TIME  
TURN OFF DELAY TIME  
FALL TIME  
VGS = 10 Vdc  
Qg  
Qgs  
Qgd  
td(ON)  
tr  
td(OFF)  
tf  
50  
8
25  
-
125  
22  
65  
ID = 38A  
VDD = 50V,  
ID = 38A,  
-
35  
nsec  
190  
170  
130  
1.9  
RG = 2.35W  
VSD  
-
-
-
-
Volts  
nsec  
FORWARD VOLTAGE  
TJ = 25•C, IS = 38A, VGS = 0V  
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%  
REVERSE RECOVERY TIME  
REVERSE RECOVERY CHARGE  
IF = 38A  
di/dt = 100A/msec  
VDD ˆ 30V  
trr  
500  
Qrr  
Ciss  
Coss  
Crss  
-
-
-
2.9  
-
mC  
pF  
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
VDS = 25 Vdc,  
VGS = 0 Vdc,  
f = 1 MHz  
3700  
1100  
200  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798  
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com  

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