是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 1000 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 1.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SHD239614 | SENSITRON |
获取价格 |
POWER MOSFETS | |
SHD244702 | SENSITRON |
获取价格 |
LOW RDS HERMETIC POWER MOSFET - P-CHANNEL | |
SHD246004 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Meta | |
SHD246004S | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Meta | |
SHD246006S | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 0.25A I(D), 60V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
SHD246723 | SENSITRON |
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HERMETIC POWER MOSFET N-CHANNEL | |
SHD246723S | SENSITRON |
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Power Field-Effect Transistor, 0.3A I(D), 60V, 1.6ohm, 1-Element, N-Channel, Silicon, Meta | |
SHD248201 | SENSITRON |
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Power Field-Effect Transistor, 6.7A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Met | |
SHD248302 | SENSITRON |
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Power Field-Effect Transistor, 10.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M | |
SHD248305 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met |