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SHD246723 PDF预览

SHD246723

更新时间: 2024-11-08 04:04:51
品牌 Logo 应用领域
SENSITRON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
2页 39K
描述
HERMETIC POWER MOSFET N-CHANNEL

SHD246723 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:SMALL OUTLINE, R-CDSO-N4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.8Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:1.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CDSO-N4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):3 A
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SHD246723 数据手册

 浏览型号SHD246723的Datasheet PDF文件第2页 
SENSITRON  
SEMICONDUCTOR  
SHD246723  
TECHNICAL DATA  
DATA SHEET 5032, REV. A  
HERMETIC POWER MOSFET  
N-CHANNEL  
SHD246723S -- S-100 (JANTX) Screening  
FEATURES:  
60 Volt, 1.6 Ohm, 0.3 A MOSFET  
Isolated Hermetic, Ceramic Package  
Fast Switching  
Low RDS (on)  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
DRAIN TO SOURCE VOLTAGE  
GATE TO SOURCE VOLTAGE  
SYMBOL  
VDS  
MIN.  
-
-
-
-
-55  
-
TYP.  
MAX.  
60  
±20  
0.3  
UNITS  
Volts  
Volts  
Amps  
Amps  
°C  
-
-
-
-
-
-
-
VGS  
ID (on)  
IDM  
TOP/TSTG  
PD  
RthJC  
ON-STATE DRAIN CURRENT @ TC = 25°C  
PULSED DRAIN CURRENT @ TC = 25°C  
OPERATING AND STORAGE TEMPERATURE  
3.0  
+150  
1250  
100  
mW  
TOTAL DEVICE DISSIPATION @ TC = 25°C  
THERMAL RESISTANCE, JUNCTION TO CASE  
-
°C/W  
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
60  
-
-
-
-
Volts  
VGS = 0V, ID = 0.1 mA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
RDS(ON)  
VGS(th)  
IDSS  
1.6  
4.0  
Pulse width = 300µs,  
Duty cycle 2%  
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 0.25 mA  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 60V, VGS = 0V  
VGS = 10V, ID = 500mA  
GS = 5V, ID = 200mA  
Volts  
µA  
V
1.0  
-
-
-
2.5  
10  
100  
200  
-200  
V
DS = 48V, VGS = 0V, TJ = 125°C  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
VGS = 10V  
VGS = -10V  
VDS = 0V  
VDD = 30V,  
ID = 200mA,  
VGS = 10V  
VGS = 0 V,  
VDS = 25 V,  
f = 1.0MHz  
IGSS  
-
-
-
-
nA  
TURN ON TIME  
t(ON)  
25  
-
nsec  
pF  
TURN OFF  
t(OFF)  
Ciss  
Coss  
Crss  
35  
30  
7
-
-
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
+
3
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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